Applied Materials, Inc.

B/e Aerospace, Inc.

Advanced Thermal Sciences Corporation

Kallol Bera

Douglas A Buchberger, Jr

Daniel John Hoffman

Paul Brillhart

James D Carducci

Richard Charles Fovell

Hamid Tavassoli

Douglas H Burns

Shahid Rauf

Kenneth S Collins

Andrew Nguyen

Kartik Ramaswamy

Philip Allan Kraus

Steven C Shannon

Anantha K Subramani

Kenneth Wesley Cowans

Glenn Zubillaga

Jennifer Y Sun

John C Forster

William W Cowans

Isaac Millan

Hiroji Hanawa

Matthew L Miller

Lawrence Wong

Yan Ye

James P Cruse

Subhash Deshmukh

Troy S Detrick

Walter R Merry

Kenny Linh Doan

Farzad Houshmand

Joseph Yudovsky

Tsutomu Tanaka

Bryan Y Pu

Dmitry A Dzilno

Kaushal Gangakhedkar

Ezra Robert Gold

Xiaoye Zhao

Xiaoping Zhou

Surajit Kumar

Bruno Geoffrion

Canfeng Lai

Douglas Buchberger

Michael C Kutney

Yaoling Pan

Kaushik Comandoor Alayavalli

Abhishek Chowdhury

Olga Regelman

Michael Robert Rice

Kelvin Chan

Hanhong Chen

Thai Cheng Chua

Jay D Pinson, Ii

Satoru Kobayashi

Jozef Kudela

Bhaskar Kumar

Kenric T Choi

Amir Bayati

Hanh D Nguyen

Aaron Jacob Miller

Dmitry Lubomirsky

Jun Ma

Li-Qun Xia

Juan Carlos Rocha-Alvarez

Mark Joseph Saly

Ganesh Balasubramanian

William Tyler Weaver

Amit Kumar Bansal

Mandyam Sriram

Jason M Schaller

Leonid Dorf

Michael D Willwerth

Keiji Horioka

Benjamin B Riordon

Robert Brent Vopat

Kevin Griffin

Ren-Guan Duan

Yue Guo

Timothy Joseph Franklin

Ajit Balakrishna

Edward P Hammond

Leonard Michael Tedeschi

Jacob Newman

Kin Pong Lo

Hong Sheng Yang

Vladimir Knyazik

Jonghoon Baek

Stephan Wege

Roger Alan Lindley

Kim Ramkumar Vellore

Chetan Mahadeswaraswamy

Patrick John Tae

Andrew J Constant

Jeffrey Charles Blahnik

Gary Leray

Badri N Ramamurthi

Vinayak Vishwanath Hassan

Anup Kumar Singh

Nipun Misra

Martin Jeff Salinas

A lid for a process chamber includes a plate having a first surface and a second surface opposite the first surface. The first surface has a recess and a seal groove formed in the first surface and surrounding the recess. The lid further includes an array of holes extending from the recess to the second surface.

Showerhead design to control stray deposition

Embodiments disclosed herein include gas concentration sensors, and methods of using such gas concentration sensors. In an embodiment, a gas concentration sensor comprises a first electrode. In an embodiment the first electrode comprises first fingers. In an embodiment, the gas concentration sensor further comprises a second electrode. In an embodiment, the second electrode comprises second fingers that are interdigitated with the first fingers.

Capacitive sensor for monitoring gas concentration

Plasma source assemblies, gas distribution assemblies including the plasma source assembly and methods of generating a plasma are described. The plasma source assemblies include a powered electrode with a ground electrode adjacent a first side and a dielectric adjacent a second side. A first microwave generator is electrically coupled to the first end of the powered electrode through a first feed and a second microwave generator is electrically coupled to the second end of the powered electrode through a second feed.

Microwave plasma source for spatial plasma enhanced atomic layer deposition (PE-ALD) processing tool

Plasma source assemblies comprising a housing with an RF hot electrode having a body and a plurality of source electrodes extending vertically from the RF hot electrode toward the opening in a front face of the housing are described. Processing chambers incorporating the plasma source assemblies and methods of using the plasma source assemblies are also described.

Symmetric plasma source to generate pie-shaped treatment

Embodiments of the present disclosure generally relate to semiconductor processing equipment, and more specifically to apparatus, e.g., magnet holding structures, that can be used with magnets during plasma processing of a substrate. In an embodiment, a magnet holding structure for a plasma-enhanced chemical vapor deposition chamber is provided. The magnet holding structure includes a top piece having a plurality of magnet retention members and a bottom piece having a plurality of magnet retention members. The top piece has a first inside edge and a first outside edge, and the bottom piece has a second inside edge and a second outside edge. The magnet holding structure further includes a plurality of casings. Each casing of the plurality of casings is configured to at least partially encapsulate a magnet, and each casing positioned between a magnet retention member of the top piece and a magnet retention member of the bottom piece.

Magnetic holding structures for plasma processing applications

Embodiments include a modular high-frequency emission source. In an embodiment, the modular high-frequency emission source includes a plurality of high-frequency emission modules, where each high-frequency emission module comprises and oscillator module, an amplification module, and an applicator. In an embodiment the oscillator module comprises a voltage control circuit and a voltage controlled oscillator. In an embodiment, the amplification module is coupled to the oscillator module. In an embodiment, the applicator is coupled to the amplification module. In an embodiment, each high-frequency emission module includes a different oscillator module.

Modular high-frequency source

A plasma chamber includes a chamber body having a processing region therewithin, a liner disposed on the chamber body, the liner surrounding the processing region, a substrate support disposed within the liner, a magnet assembly comprising a plurality of magnets disposed around the liner, and a magnetic-material shield disposed around the liner, the magnetic-material shield encapsulating the processing region near the substrate support.

Magnetic-material shield around plasma chambers near pedestal

Embodiments described herein relate to magnetic and electromagnetic systems and a method for controlling the density profile of plasma generated in a process volume of a PECVD chamber to affect deposition profile of a film on a substrate and/or facilitate chamber cleaning after processing. In one embodiment, a system is disclosed that includes a rotational magnetic housing disposed about an exterior sidewall of a chamber. The rotational magnetic housing includes a plurality of magnets coupled to a sleeve that are configured to travel in a circular path when the rotational magnetic housing is rotated around the chamber, and a plurality of shunt doors movably disposed between the chamber and the sleeve, wherein each of the shunt doors are configured to move relative to the magnets.

Shunt door for magnets in plasma process chamber

Embodiments described herein relate to apparatus and techniques for radio frequency (RF) phase control in a process chamber. A process volume is defined in the process chamber by a faceplate electrode and a support pedestal. A grounding bowl is disposed within the process chamber about the support pedestal opposite the process volume. The grounding bowl substantially fills a volume other than the process volume below the support pedestal. A phase tuner circuit is coupled to an RF mesh disposed in the support pedestal and the faceplate electrode. The tuner circuit adjusts a phase difference between a phase of the faceplate electrode and a phase of the RF mesh.

Device and method for tuning plasma distribution using phase control

Plasma source assemblies, gas distribution assemblies including the plasma source assembly and methods of generating plasma are described. The plasma source assemblies include a powered electrode with a ground electrode adjacent a first side and a dielectric adjacent a second side. A first microwave generator is electrically coupled to the first end of the powered electrode through a first feed and a second microwave generator is electrically coupled to the second end of the powered electrode through a second feed.

Susceptor assemblies comprising a susceptor base and a plurality of pie-shaped skins thereon are described. A pie anchor can be positioned in the center of the susceptor base to hold the pie-shaped skins in place during processing.

Contour pocket and hybrid susceptor for wafer uniformity

Embodiments disclosed herein comprise a sensor. In an embodiment, the sensor comprises a substrate having a first surface and a second surface opposite from the first surface. In an embodiment, the sensor further comprises a first electrode over the first surface of the substrate, and a second electrode over the first surface of the substrate and adjacent to the first electrode. In an embodiment, the sensor further comprises a barrier layer over the first electrode and the second electrode.

Capacitive sensor for chamber condition monitoring

Plasma source assemblies comprising an RF hot electrode having a body and at least one return electrode spaced from the RF hot electrode to provide a gap in which a plasma can be formed. An RF feed is connected to the RF hot electrode at a distance from the inner peripheral end of the RF hot electrode that is less than or equal to about 25% of the length of the RF hot electrode.

Plasma source for rotating susceptor

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San Jose, CA, United States of America

Kallol Bera