Sandisk Information Technology (shanghai) Co., Ltd.

Sandisk Semiconductor (shanghai) Co. Ltd.

Kaiyou Qian

Chin-Tien Chiu

Ye Bai

Cheeman Yu

Dacheng Huang

Hem P Takiar

Shrikar Bhagath

Zhong Lu

Chin Tien Chiu

Shiv Kumar

Peng Fu

Yuang Zhang

Lu Zhong

Shan Luo

A semiconductor device is disclosed including material for absorbing EMI and/or RFI. The device includes a substrate, one or more semiconductor die, and molding compound around the one or more semiconductor die. The material for absorbing EMI and/or RFI may be provided within or on a solder mask layer on the substrate, or within a dielectric core of the substrate. The device may further include EMI/RFI-absorbing material around the molding compound and in contact with the EMI/RFI-absorbing material on the substrate to completely enclose the one or more semiconductor die in EMI/RFI-absorbing material.

Semiconductor device including electromagnetic absorption and shielding

A semiconductor device is disclosed including material for absorbing EMI and/or RFI The device includes a substrate (), one or more semiconductor die (), and molding compound around the one or more semiconductor die (). The material for absorbing EMI and/or RFI may be provided within or on a solder mask layer () on the substrate (). The device may further include EMI/RFI-absorbing material around the molding compound and in contact with the EMI/RFI-absorbing material on the substrate to completely enclose the one or more semiconductor die in EMI/RFI-absorbing material.

A memory device including a metallic layer shielding electromagnetic radiation and/or dissipating heat, and a method of making the memory device, are disclosed. The metallic layer is formed on a metallic layer transfer assembly. The metallic layer transfer assembly and the unencapsulated memory device are placed in a mold and encapsulated. During the encapsulation and curing of the molding compound, the metallic layer is transferred from the shield to the encapsulated memory device.

EMI shielding and thermal dissipation for semiconductor device

A semiconductor device includes a substrate () with a cavity () formed therein for receiving a semiconductor die. In examples, the semiconductor die is a controller die (). The controller die () may be electrically connected to the substrate () with electrical traces () which may be formed for example by printing. After the controller die () is electrically connected to the substrate (), one or more memory die () may be affixed to the substrate (), over the cavity () and controller die ().

Semiconductor device including embedded controller die and method of making same

A semiconductor wafer, die and semiconductor package formed therefrom are disclosed, where the inactive surface of the wafer has an extrinsic gettering pattern formed from a texturing process. In examples, the texturing process follows a polishing process that removes stress concentration point from the inactive surface of the wafer.

Extrinsic gettering on semiconductor devices

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Shanghai, China

Kaiyou Qian