Intel Corporation

Sk Hynix Nand Product Solutions Corp.

Kaitlyn Chen

Asad Azam

R Selvakumar Raja Gopal

Dinesh Somasekhar

Sreejit Chakravarty

Rodrigo Gonzalez Gutierrez

Aravinda Radhakrishnan

Marcus Wing-Kin Cheung

Naga Mallika Bhandaru

Michael Nelms

Techniques and mechanisms for a memory device to support memory repair functionality for a column of a memory array. In an embodiment, the column comprises first memory cells and second memory cells, where switch circuitry is coupled between multiple signal lines and the column. Control circuitry transitions the switch circuitry to a state which corresponds to a defective one of the first cells. The state switchedly decouples the defective cell, and an adjoining one of the first cells, each from respective ones of the signal lines. During the state, two or more of the signal lines are able to communicate each to a different respective one of the second cells. In another embodiment, the switch circuitry is transitioned to the state based on an identifier of the defective cell, and independent of whether any other cell of the column has been identified as defective.

Device, system and method for memory repair with multi-cell switching

The disclosed embodiments relate to method, apparatus and system for testing memory circuitry and diagnostic components designed to test the memory circuitry. The memory may be tested regularly using Memory Built-In Self-Test (MBIST) to detect memory failure. Error Correction Code (ECC)/Parity is implemented for SRAM/Register Files/ROM memory structures to protect against transient and permanent faults during runtime. ECC/Parity encoder and decoder logic detect failure on both data and address buses and are intended to catch soft error or structural fault in address decoding logic in SRAM Controller, where data may be read/written from/to different locations due to faults. ECC/parity logic on the memory structures are subject to failures. In certain exemplary embodiments, an array test controller is used to generate and transmit error vectors to thereby determine faulty diagnostic components. The test vectors may be generated randomly to test the diagnostic components during run-time for in-field testing.

Methods, systems and apparatus for in-field testing for generic diagnostic components

Technologies for built-in self-testing of a memory array using error detection and correction code knowledge include identifying data errors between pseudo random data written to the memory array and the data read back from the memory array and ignoring those data errors determined to be correctable. The data errors may be determined to be correctable if an error corrector circuit can correct those errors or if the number of errors per memory chuck is less than a number of errors correctable by the error correct circuit.

Apparatus for memory built-in self-test with error detection and correction code awareness

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Hillsboro, OR, United States of America

Kaitlyn Chen