The Penn State Research Foundation

Kaisheng Ma

Suman Datta

John Sampson

Vijaykrishnan Narayanan

Sumitha George

Xueqing Li

Sumeet Kumar Gupta

Embodiments include nonvolatile a memory (NVM) device that can be configured for logic switching and/or digital computing. For example, embodiments of the NVM device can be configured as any one or combination of a memory cell, a D flip flop (DFF), a Backup and Restore circuit (B&R circuit), and/or a latch for a DFF. Any of the NVM devices can have a Fe field effect transistors (FeFET) configured to exploit the I&#x2212;Vhysteresis of the steep switch at low voltage for logic memory synergy. The FeFET-based devices can be configured to include a wide hysteresis, a steep hysteresis edge, and high ratio between the two Istates at V=0.

Nonvolatile digital computing with ferroelectric FET

Embodiments include nonvolatile a memory (NVM) device that can be configured for logic switching and/or digital computing. For example, embodiments of the NVM device can be configured as any one or combination of a memory cell, a D flip flop (DFF), a Backup and Restore circuit (B&R circuit), and/or a latch for a DFF. Any of the NVM devices can have a Fe field effect transistors (FeFET) configured to exploit the I-Vhysteresis of the steep switch at low voltage for logic memory synergy. The FeFET-based devices can be configured to include a wide hysteresis, a steep hysteresis edge, and high ratio between the two Istates at V=0.

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Kaisheng Ma