Chinese Academy of Sciences

Kaiping Zhang

Ming Liu

Changqing Xie

Guozhong Xing

Huai Lin

Yan Wang

Qi Liu

Yu Liu

Di Wang

Hangbing Lv

Ling Li

Xiaoxin Xu

Long Liu

Jiebin Niu

Kangwei Zhang

Lina Shi

Guanya Wang

Longjie Li

A self-reference storage structure includes: three transistors, including a first transistor T, a second transistor T, and a third transistor T; and two magnetic tunnel junctions, including a first magnetic tunnel junction MTJand a second magnetic tunnel junction MTJ. The first magnetic tunnel junction MTJis connected in series between the first transistor Tand the second transistor T, and the second magnetic tunnel junction MTJis connected in series between the second transistor Tand the third transistor T. When the first transistor T, the second transistor Tand the third transistor Tare turned on, one-bit binary information is written; and when data is stored, one-bit binary write can be implemented only by applying an unidirectional current pulse.

Self-reference storage structure and in-memory computing circuit

The present disclosure provides a method for fabricating an anti-reflective layer on a quartz surface by using a metal-induced self-masking etching technique, comprising: performing reactive ion etching to a metal material and a quartz substrate by using a mixed gas containing a fluorine-based gas, wherein metal atoms and/or ions of the metal material are sputtered to a surface of the quartz substrate, to form a non-volatile metal fluoride on the surface of the quartz substrate; forming a micromask by a product of etching generated by reactive ion etching gathering around the non-volatile metal fluoride; and etching the micromask and the quartz substrate simultaneously, to form an anti-reflective layer having a sub-wavelength structure.

Method for fabricating anti-reflective layer on quartz surface by using metal-induced self-masking etching technique

A reconfigurable PUF device based on fully electric field-controlled domain wall motion includes a voltage control layer, upper electrodes, a lower electrode, antiferromagnetic pinning layers, and a magnetic tunnel junction (MTJ). The MTJ includes, from bottom to top, a ferromagnetic reference layer, a potential barrier tunneling layer and a ferromagnetic free layer. In the device, an energy potential well is formed in a middle portion of the ferromagnetic free layer by applying a voltage to the voltage control layer to control magnetic anisotropy, and a current is fed into either of the upper electrodes to drive generation of the magnetic domain walls and pin the magnetic domain walls to the potential well. After the voltage is removed, the potential well is lowered so that the magnetic domain walls are in a metastable state, thereby either a high resistance state or a low resistance state is randomly obtained.

Reconfigurable PUF device based on fully electric field-controlled domain wall motion

Growing community of inventors

Beijing, China

Kaiping Zhang