Dalian University of Technology

Kaiming Ma

Huolin Huang

A cross-shaped high-temperature three-dimensional Hall sensor includes the X column, the Y column and the Z column all made of third-generation semiconductor materials. The X column, the Y column and the Z column are vertically connected to each other. An electrode C1 and an electrode C2 are respectively arranged at two ends of the Z column. An electrode C3 and an electrode C4 are respectively arranged at two sides of the Y column. An electrode C5 and an electrode C6 are respectively arranged at two sides of the X column. The current description uses the excellent high temperature performance of the third generation semiconductor to make the sensor work in the high temperature environment, the new structure greatly reduces the volume compared with the other device packaging combined Hall sensor, and makes the sensor work in very narrow space.

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Dalian, China

Kaiming Ma