Harbin Institute of Technology

Kaili Yao

Lei Yang

Jiaqi Zhu

Ge Gao

Wenxin Cao

Benjian Liu

Guoyang Shu

Jiwen Zhao

Bing Dai

Kang Liu

Jiecai Han

Direct growth methods for preparing diamond-assisted heat-dissipation silicon carbide substrates of GaN-HEMTs are disclosed. In an embodiment, the direct growth method includes the following steps: (1) etching holes in a surface of a silicon carbide substrate to produce a silicon carbide wafer; (2) ultrasonic cleaning the produced silicon carbide wafer; (3) establishing an auxiliary nucleation point on a surface of the silicon carbide wafer; (4) depositing a diamond layer; (5) removing the portion of the diamond layer on the upper surface while retaining the portion of the diamond layer in the holes; (6) ultrasonic cleaning; and (7) depositing diamond in the holes on the silicon carbide wafer until the holes are fully filled.

Direct growth methods for preparing diamond-assisted heat-dissipation silicon carbide substrates of GaN-HEMTs

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Heilongjiang, China

Kaili Yao