Osram Sylvania Inc.

Kailash C Mishra

Madis Raukas

Darshan Kundaliya

Walter Peter Lapatovich

George C Wei

Richard Speer

Thomas E Peters

Adam Scotch

David W Johnston

David Hamby

Joseph Laski

Harold Rothwell, Jr

Robert T McSweeney

Matthew Stough

Joanne M Browne

Jean M Evans

Thomas H Reilly Iii

Jan B Talbot

Bing Han

Jonathan Tap

Structures for transitioning between two layers of differing lattice parameters are disclosed. In some embodiments, the structures are in the form of a superlattice that serves as a strain relieving transition between two layers of differing lattice parameters. By controlling the properties of the superlattice, the superlattice can exhibit desirable properties such as transparency to light and lattice matching to one of the two layers of differing lattice parameters. Optoelectronic devices such as light emitting diodes including such superlattices are also disclosed.

Strain relief superlattices and optoelectronic devices including the same

Thin film wavelength converters and methods for making the same are disclosed. In some embodiments, the thin film converters include a first thin film layer of first wavelength conversion material, a conductive layer, and a second thin film layer of a second wavelength conversion material. In one embodiment, a photoresist mask is applied to the conductive layer to form a pattern of by which the second wavelength conversion material may be applied by electrophoretic deposition to the exposed regions of the surface of the conductive layer.

Thin film wavelength converters and methods for making the same

A wavelength converter for an LED is described that comprises a substrate of monocrystalline garnet having a cubic crystal structure, a first lattice parameter and an oriented crystal face. An epitaxial layer is formed directly on the oriented crystal face of the substrate. The layer is comprised of a monocrystalline garnet phosphor having a cubic crystal structure and a second lattice parameter that is different from the first lattice parameter wherein the difference between the first lattice parameter and the second lattice parameter results in a lattice mismatch within a range of &#xb1;15%. The strain induced in the phosphor layer by the lattice mismatch shifts the emission of the phosphor to longer wavelengths when a tensile strain is induced and to shorter wavelengths when a compressive strain is induced. Preferably, the wavelength converter is mounted on the light emitting surface of a blue LED to produce an LED light source.

Wavelength converter for an LED and LED containing same

A light emitting diode (LED) includes a p-n junction containing luminescent activator ions. The visible emission from the activator ions preferably complementing the band edge emission of the LED in order to produce an overall white emission from the LED. In a preferred embodiment, the LED has double heterojunction structure having a semiconductor active layer between two confinement layers. The semiconductor active layer includes activator ions preferably selected from among Eu, Tb, Dy, Pr, Tm, and Mn. The electron-hole pairs trapped within the active layer sensitize the activator ions, causing the activator ions to emit light.

Method for making a light emitting diode having a P-N junction doped with one or more luminescent activator ions

A ceramic discharge vessel is provided wherein the vessel comprises a hollow body for enclosing a discharge and the hollow body is made of a polycrystalline dysprosium oxide containing a luminescent dopant that emits one or more visible light wavelengths when stimulated by radiation generated by the discharge. Preferably, the polycrystalline dysprosium oxide has been doped with one or more of europium, cerium, or terbium in an amount from about 0.1 to about 10 percent by weight on an oxide basis.

Doped dysprosia discharge vessel

A blue-enriched incandescent lamp having on the interior surface of its light transmissive glass envelope a coating in accordance with an aspect of the invention. The coating contains a phosphor that is energized by the ultraviolet/violet emission (&#x3c;420 nm) from the hot filament causing it to emit radiation in the range of 420 to 490 nm. In a preferred embodiment of the invention, the coating contains a europium-activated barium magnesium aluminate phosphor and a blue pigment.

Blue-enriched incandescent lamp

A europium-activated barium aluminate phosphor is described wherein the phosphor is doped with tetravalent ions of Hf, Zr, or Si. Preferably, the phosphor is represented by (BaEu)MgAlO:(Hf,Zr,Si)where 0.05&#x2266;x&#x2266;0.25 and 0&#x3c;y&#x2266;0.05. The tetravalent dopant ions are shown to enhance the stability of the phosphor in UV/VUV applications.

Europium-activated barium magnesium aluminate phosphor

A protective coating for aluminate phosphors is described. The protective coating comprises at least a partial spinel coating having the general formula Mg Al O , where 0&lE;x<1 and 0&lE;y<1. The coating is applied by an aqueous solution method which may be compatible with conventional fluorescent lamp manufacturing techniques.

Protective spinel coating for aluminate phosphors

A phosphor coating for gas discharge lamps is provided. The phosphor coating contains a nano-size phosphor which promotes adherence of the primary phosphor to the glass envelope. The phosphor coating is applied to the interior surface of the gas discharge lamp using an aqueous suspension containing the primary phosphor, the nano-size phosphor, and an organic binder.

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North Chelmsford, MA, United States of America

Kailash C Mishra