Shenzhen China Star Optoelectronics Technology Co., Ltd.

Tcl China Star Optoelectronics Technology Co., Ltd.

Shenzhen China Star Optoelectronics Co., Ltd

Kaifeng Zhou

A light-emitting diode (LED) backlight driving circuit is provided. The LED backlight driving circuit includes M LED light-emitting unit groups connected in series and each of the LED light-emitting unit groups includes N LED light-emitting units connected in parallel, where both N and M are an integer greater than 1, wherein each of the LED light-emitting units is connected in series with at least a variable resistor with variable resistance for balancing a voltage difference. The present application further provides a backlight module and a liquid crystal display device manufactured using the LED backlight driving circuit.

LED backlight driving circuit, backlight module and liquid crystal display device

The present application provides a touch display panel and a display device. The touch display panel includes a substrate and a plurality of pixel electrodes. The plurality of pixel electrodes are disposed on the substrate in an array, wherein each of the pixel electrodes includes a first trunk portion and a second trunk portion that are arranged intersecting with each other. The present application realizes touch display integration of the touch display panel by setting a first touch electrode corresponding to the first trunk portion and setting a second touch electrode corresponding to the second trunk portion on the substrate.

Touch display panel and display device

Disclosed are a quantum dots light-emitting diode and a method for manufacturing the same. The quantum dots light-emitting diode includes an anode, which is arranged on a substrate; a first hole injection layer, which is a neutral hole injection layer and arranged on the anode; a second hole injection layer, which is arranged on the first hole injection layer; a quantum dots light-emitting layer, which is arranged on the second hole injection layer; and a cathode, which is arranged on the quantum dots light-emitting layer.

Quantum dots light-emitting diode and method for manufacturing the same

An OLED is provided that includes a substrate; and an anode, a P-type organic semiconductor layer, an N-type organic semiconductor layer, and a cathode that are successively laminated on the substrate. An interface between the P-type organic semiconductor layer and the N-type organic semiconductor layer is a curved surface structure.

OLED and method for manufacturing OLED

The present disclosure provides a quantum dot electroluminescent device, which includes: a substrate; an anode disposed on the substrate; a hole transmission layer disposed on the anode; a quantum dot luminescent layer disposed on the hole transmission layer; an electron transmission layer disposed on the quantum dot luminescent layer; and a cathode disposed on the electron transmission layer, wherein the hole transmission layer is a P-type doped hole transmission layer and/or the electron transmission layer is a N-type doped electron transmission layer. The present disclosure further provides a method of manufacturing the quantum dot electroluminescent device. The present disclosure causes degrees of curvature of interfacial energy bands to be different by forming a gradient doping effect in a multi-layer hole transmission layer, so as to form a gradient energy level, that is, the HOMO energy level deepens in order from the anode to the quantum dot luminescent layer, thereby reducing the energy barrier of the holes being injected from the anode to the quantum dot luminescent layer to improve the luminescent efficiency of the device.

Quantum dot electroluminescent device and method of manufacturing the same

Disclosed are a 3D display panel and the 3D display device. The 3D display panel includes a base plate, a plurality of pixel units, and first and second light emission units. Each of the pixel units includes at least one the sub-pixel, which includes primary and secondary pixel respectively corresponding to the first and second light emission units. Each of the two light emission units includes an anode, a hole transportation layer, an orientation layer, a light emissive layer, an electron transportation layer, and a cathode that are sequentially stacked. In the first and second light emission units, the orientation layers set the orientations of the light emissive layers to first and second orientation states, respectively, and first and second electrons and first and second holes respectively generated by the cathodes and anodes are recombined in the light emissive layers to respectively emit first and polarization light, which are orthogonal.

3D displaly panel and 3D display device

A manufacturing method of electroluminescent devices includes: providing a first electrode; electrically depositing a first carrier injection layer on the first electrode to form a first electrode component; adopting a multiple transfer-print method to form a plurality of functional layers on the first electrode component in turn, one functional layer is manufactured by executing the transfer-print method once; and arranging a second electrode on the farthest functional layer away from the first carrier injection layer. The manufacturing method is capable of manufacturing the electroluminescent devices having a plurality of functional layers. The material utilization rate is high and the cost is low.

Manufacturing methods of electroluminescent devices

A white light emitting diode device includes a substrate, an ultraviolet light source generating panel and a photoluminescent layer. The ultraviolet light source generating panel is disposed on a first surface of the substrate. The ultraviolet light source generating panel is used for generating ultraviolet light. The photoluminescent layer is disposed on a second surface of the substrate. The photoluminescent layer is used for generating white light when the photoluminescent layer is irradiated by the ultraviolet light.

Growing community of inventors

Guangdong, China

Kaifeng Zhou