Mitsui Chemicals, Inc.

Kaichiro Haruta

Kazuo Kohmura

Jun Kamada

Kenichi Fujii

Yasuhisa Kayaba

Takashi Unezaki

Mitsuo Nakamura

Michio Eriguchi

Satoko Fujiyama

Takashi Hayashi

Shigeru Mio

Hidenobu Nogi

Hidetoshi Tsunoda

Tomoya Matayoshi

Yoichi Kodama

Kiyomi Imagawa

This method for producing a semiconductor device comprises: a first step wherein a plurality of semiconductor chips are affixed onto a supporting substrate such that circuit surfaces of the semiconductor chips face the supporting substrate; a second step wherein a plurality of sealed layers are formed at intervals by applying the sealing resin onto the semiconductor chips by three-dimensional modeling method, each sealed layer containing one or more semiconductor chips embedded in a sealing resin; a third step wherein the sealed layers are cured or solidified; and a fourth step wherein sealed bodies are obtained by separating the cured or solidified sealed layers from the supporting substrate.

Method for producing semiconductor device and intermediate for semiconductor device

Provided is an adhesive member including: a base material having an uneven shape on at least one surface; and a surface layer covering at least a portion of the surface having the uneven shape on the base material.

Adhesive member and production method for adhesive member

The purpose of the present invention is to provide a semiconductor substrate manufacturing method, which prevents detachment of a semiconductor wafer being ground, and which prevents cracking or chipping in a semiconductor substrate obtained. In order to solve the problem, the semiconductor substrate manufacturing method comprises: a polyimide layer forming step of forming a polyimide layer on a support material; a wafer attaching step of affixing the support material and a semiconductor wafer to each other with the polyimide layer disposed therebetween; a wafer grinding step of grinding the semiconductor wafer; a support material peeling step of peeling the support material from the polyimide layer; and a polyimide layer peeling step of peeling the polyimide layer from the semiconductor wafer. The polyimide layer includes polyimide which includes a benzophenone skeleton and an aliphatic structure, wherein an amine equivalent weight is 4000 to 20000.

Semiconductor substrate manufacturing method, semiconductor device, and method for manufacturing same

A non-aqueous electrolyte solution containing a cyclic sulfate compound represented by formula (I) is provided, wherein in formula (I), Rrepresents a group represented by formula (II) or a group represented by formula (III); Rrepresents a hydrogen atom, an alkyl group having from 1 to 6 carbon atoms, a group represented by formula (II), or a group represented by formula (III); and in formula (II), Rrepresents a halogen atom, an alkyl group having from 1 to 6 carbon atoms, a halogenated alkyl group having from 1 to 6 carbon atoms, an alkoxy group having from 1 to 6 carbon atoms, or a group represented by formula (IV). 

Cyclic sulfate compound, non-aqueous electrolyte solution containing same, and lithium secondary battery

Growing community of inventors

Ichihara, Japan

Kaichiro Haruta