Realtek Semiconductor Inc.

Winbond Electronics Corporation

Nuvoton Technology Corporation

Kai-Yi Huang

Ta-Hsun Yeh

Cheng-Wei Luo

Chieh-Pin Chang

Hsiao-Tsung Yen

Yuh-Sheng Jean

Chih-Yu Tsai

Sheng-Hung Lin

Chia-Jen Hsu

Chih-Hua Liu

Tai-Sheng Chen

I-Jhen Hsu

Len-Yi Lu

The present invention discloses an inductor apparatus. Each of a first section of a second and a fourth quadrant loops are bridged to a first section of a former quadrant loop and are bridged to a third section to a second section of a diagonal quadrant loop. Each of a second section of the second and the fourth quadrant loops are coupled to a third section of the diagonal quadrant loop, and to the second section of a former quadrant loop. A first section of a third quadrant loop is coupled to a first section of the fourth quadrant loop, and to a third section of the first quadrant loop. The second section of the third quadrant loop is coupled to a second section of the fourth quadrant loop and to a third section of the third quadrant loop, and to a third section of the first quadrant loop.

Inductor apparatus

An inductor device includes a first coil and a second coil. The first coil includes a first connection member and a plurality of first circles. At least two first circles of the first circles are located at a first area, and half of the first circle of the first circles is located at a second area. The second coil includes a second connection member and a plurality of second circles. At least two second circles of the second circles are located at the second area, and half of the second circle of the second circles is located at the first area. The first connection member is coupled to the at least two first circles and the half of the first circle. The second connection member is coupled to the at least two second circles and the half of the second circle.

Inductor device

An integrated stack transformer is provided, wherein the integrated stack transformer includes a first winding, a second winding and a third winding implemented by a first metal layer, and a fourth winding and a fifth winding implemented by a second metal layer. The second winding is positioned between the first winding and the third winding, the fourth winding substantially overlaps the first winding, the fifth winding substantially overlaps the third winding, and a distance between the fifth winding and the fourth winding is less than a distance between the third winding and the first winding. The first winding, the third winding, the fourth winding and the fifth winding form a part of one of a primary inductor and a secondary inductor of the integrated stack transformer, and the second winding is a part of the other of the primary inductor and the secondary inductor.

Integrated stack transformer

An integrated inductor is provided. The integrated inductor includes a first winding and a second winding, and has a first end, a second end, and a node. The first winding utilizes the first end and the node as two ends thereof and includes a first coil and a second coil, which do not overlap. The second winding utilizes the second end and the node as two ends thereof and includes a third coil and a fourth coil, which do not overlap. The first coil and the third coil have an overlapping area, and the second coil and the fourth coil have an overlapping area. The first coil is surrounded by the third coil, and the fourth coil is surrounded by the second coil.

Highly symmetric integrated inductor

A semiconductor structure includes a first inductor, a second inductor, and a first input/output (I/O) pad. The first I/O pad is coupled to the first inductor and the second inductor. The first I/O pad, a first central axis of a first magnetic field of the first inductor, and a second central axis of a second magnetic field of the second inductor are disposed sequentially along a first direction.

Semiconductor structure

Inductor device includes first and a second coils. First coil is wound into plural first circles. Second coil is wound into plural second circles. First connection member is coupled to first circle between outermost and innermost sides among first circles located at first area and first circle on outermost side among first circles located at second area. Second connection member is coupled to second circle on outermost side among second circles located at first area and second circle between outermost and innermost sides among second circles located at second area. At least two first circles of first circles are located at first area, and half of first circle of first circles is located at second area. Half of second circle of second circles is located at first area, and at least two second circles of second circles are located at second area.

An inductor structure includes a first curve metal component, a second curve metal component, a connection component, and a capacitor. The first and the second curve metal components are disposed on a layer. The layer is located at a first plane, the first and the second curve metal components are located at a second plane. The connection component is coupled to the first curve metal component and the second curve metal component. A first terminal of the connection component is coupled to a first terminal of the first curve metal component. A second terminal of the connection component is coupled to a first terminal of the second curve metal component. A first terminal of the capacitor is coupled to a second terminal of the first curve metal component. A second terminal of the capacitor is coupled to a second terminal of the second curve metal component.

Inductor structure

An inductor device includes a first coil and a second coil. The first coil is wound into a plurality of first circles, and the second coil is wound into a plurality of second circles. At least two of the second circles are interlaced with at least two of the first circles on a first side. The at least two of the second circles are disposed adjacent to each other on the first side. At least one of the first circles is only interlaced with at least one of the second circles on a second side. At least another one of the first circles is only interlaced with at least another one of the second circles on the second side.

An apparatus is provided that includes an inductor, a pair of modulating coils, a first switch and a second switch. The inductor includes two sub-loops electrically coupled with each other. The modulating coils include a first modulating coil and a second modulating coil respectively disposed corresponding to each of the two sub-loops. The first switch and the second switch are respectively disposed at the first modulating coil and the second modulating coil. Each of the first modulating coil and the second modulating coil forms an open loop when the first switch and the second switch are under an open status, and each of the first modulating coil and the second modulating coil forms a closed loop when the first switch and the second switch are under a closed status that enables a modulation of an inductance of the inductor.

Variable inductor apparatus

An integrated circuit is provided. The integrated circuit includes a first trace, a second trace and a third trace. The first trace, the second trace and the third trace are each a continuous trace. The first trace, the second trace and the third trace together use only two conductor layers of a semiconductor structure. In a crossing area of the first trace, the second trace and the third trace, the first trace crosses the second trace once, the first trace crosses the third trace once, and the second trace crosses the third trace once.

Semiconductor component

A high voltage semiconductor device includes a semiconductor substrate, a first doped well, a second doped well, a mixed doped well, and a gate structure. The first, the second, and the mixed doped wells are disposed in the semiconductor substrate. At least a part of the first doped well and at least a part of the second doped well are located at two opposites sides of the gate structure in a horizontal direction respectively. The mixed doped well are located between the first doped well and the second doped well. The first and the second doped well include a first conductivity type dopant and a second conductivity type dopant respectively. The mixed doped well includes a mixed dopant. A part of the mixed dopant is identical to the first conductivity type dopant, and another part of the mixed dopant is identical to the second conductivity type dopant.

High voltage semiconductor device and manufacturing method thereof

An inductor structure includes a first curve metal component, a second curve metal component, and a connection component. The first curve metal component is disposed on a layer. The layer is located at a first plane, the first curve metal component is located at a second plane, and the first plane is perpendicular to the second plane. The second curve metal component is disposed on the layer. The second curve metal component is located at the second plane. The connection component is coupled to the first curve metal component and the second curve metal component.

An integrated circuit structure includes a substrate, an integrated inductor, multiple components, multiple metal interconnections, a first shielding structure, and a second shielding structure. The integrated inductor is substantially formed in a first layer of the integrated circuit structure. The metal interconnections are coupled to the integrated inductor and the components. The first shielding structure is formed between the first layer and the substrate and is substantially beneath the integrated inductor. The second shielding structure is formed between the first layer and the substrate, has substantially the same distribution as the metal interconnections, and is substantially beneath the metal interconnections. The first shielding structure and the second shielding structure are equipotential.

Integrated circuit structure, voltage-controlled oscillator and power amplifier

A semiconductor element including first and second windings. The first winding is substantially located in a first metal layer of a semiconductor structure and includes a first outer coil, a first inner coil, and a first bridging structure. The first bridging structure, located in a range substantially enclosed by the first inner coil, connects the first outer coil and the first inner coil. The second winding is substantially located in a second metal layer of a semiconductor structure and includes a second outer coil, a second inner coil, and a second bridging structure. The second bridging structure, located in a range substantially enclosed by the second inner coil, connects the second outer coil and the second inner coil. The first bridging structure is substantially located in the second metal layer, and the second bridging structure is substantially located in the first metal layer.

Integrated transformers and integrated balanced to unbalanced transformers

This invention discloses an integrated inductor structure, including a first metal trace, a second metal trace, and a connecting metal trace. Tow terminals of the connecting metal trace are respectively connected to the first metal trace and the second metal trace through at least a connecting structure. The connected first metal trace, the connecting metal trace and the second metal trace together form an inductor structure. The connecting structure is connected to a connecting area of the first metal trace. The connecting area of the first metal trace has a first width. A smallest width of the first metal trace is a second width. The second width is smaller than the first width.

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Taipei, Taiwan

Kai-Yi Huang