Taiwan Semiconductor Manufacturing Comp. Ltd.

Kai-Yi Chu

Keng-Chu Lin

Chih-Wei Chang

Sung-Li Wang

Chun-Hsien Huang

Shuen-Shin Liang

Chia-Hung Chu

Ken-Yu Chang

Hsu-Kai Chang

Hung-Yi Huang

Chun-I Tsai

Chien Chang

Chi-Hung Chuang

The present disclosure provides an interconnect structure and a method for forming an interconnect structure. The method for forming an interconnect structure includes forming a bottom metal line in a first interlayer dielectric layer, forming a second interlayer dielectric layer over the bottom metal line, exposing a top surface of the bottom metal line, increasing a total surface area of the exposed top surface of the bottom metal line, forming a conductive via over the bottom metal line, and forming a top metal line over the conductive via.

Interconnect structure and manufacturing method for the same

The present disclosure provides an interconnect structure, including a first interlayer dielectric layer, a bottom metal line including a first metal in the first interlayer dielectric layer, a conductive via including a second metal over the bottom metal line, wherein the second metal is different from the first metal, and the first metal has a first type of primary crystalline structure, and the second metal has the first type of primary crystalline structure, a total area of a bottom surface of the conductive via is greater than a total cross sectional area of the conductive via, and a top metal line over the conductive via, wherein the top metal line comprises a third metal different from the second metal.

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Hsinchu, Taiwan

Kai-Yi Chu