Sun Yat-senuniversity

South China University of Technology

Carnegie Mellon University

Colgate Palmolive Company

The Second Affiliated Hospital of Guangzhou University of Chinese Medicine

Guangdong Provincial Hospital of Tcm

Guangzhou Lian-med Technology Co., Ltd.

Guangdong Provincial Academy of Chinese Medical Sciences

The Second Clinical College of Guangzhou University of Chinese Medecine

Kai Wang

Yu Shi

Yi Wang

Hong Yang Wang

Bo Liu

Jun Wang

Xiaodong Han

Jun Chen

Devesh Badola

Jun Li

Todd D Van Gordon

Zijing Xie

Ruohe Yao

Lijun Tan

Xianda Zhou

Huimin Li

Hai Ou

Yihong Qi

Christopher Joseph Miller

Derek Michael Samaroo

Xianzhang Huang

Quanfu Chen

Bidan Zheng

Ennian Li

Yunshan Wu

Yiqi Yang

Xiaowan Wang

Jinlang Zhong

Liqiao Han

Zhimin Yang

Hualun Liang

Runyue Huang

Youping Wang

Xiaoxing Lu

Provided is a weak-signal reading circuit for a sensor, comprising a sensing signal input amplifying unit and a signal reading unit. The sensing signal input amplifying unit comprises a first transistor, wherein a gate and a drain of the first transistor are connected with a sensor; the signal reading unit is connected to a source of the first transistor, the first transistor is turned on when the sensor generates a sensing signal, so that the sensing signal is captured by the signal reading unit. When the sensor senses a signal and generates a voltage, the first transistor tends to be switched on, then the signal reading unit reads the sensing signal through the first transistor which has been turned on, that is, by providing the first transistor, the weak-signal reading circuit for sensor can be self-driven according to the voltage generated by the sensor without an extra drive circuit, thereby achieving low power consumption.

Weak-signal reading circuit for sensor

The present invention discloses a micro-sized face-up LED device with a micro-hole array and preparation method thereof. The LED device is prepared based on a GaN-based epitaxial layer and includes a GaN-based epitaxial layer, a current spreading layer, a P electrode, an N electrode and a passivation layer; the GaN-based epitaxial layer including a substrate, an N-type CaN layer, i.e., an N-GaN layer, a multiple quantum well layer (MQW), and a P-type GaN layer, i.e., a P-GaN layer; and the N-GaN layer including an etched exposed N-GaN layer and an etched formed N-GaN layer. The present invention improves luminescence efficiency while ensuring the device modulation bandwidth; and after the micro-hole array is etched by ICP, a sample continues to be etched by using the current spreading layer etching liquid to prevent the leakage caused by the expansion of the current spreading layer in the etching process.

Micro-sized face-up led device with micro-hole array and preparation method thereof

Provided is a photoelectric sensor, a random accessible active pixel circuit, an image sensor and a camera. A photoelectric sensor comprises a doped region, a substrate, a doped source region, a doped drain region, and two isolation regions; wherein the doped region is arranged on a bottom surface of the substrate so as to form a photodiode; a cathode of the photodiode is formed in the doped region and is connected to a positive voltage to make the photodiode work in a reverse bias region; wherein the doped source region and the doped drain region are spaced apart on top of the substrate so as to form a field effect transistor; a source is formed on a top surface of the doped source region, and a drain is formed on the top surface of the doped drain region; wherein the two isolation regions are arranged on opposite sides of the substrate, and extend from the doped source region and the doped drain region to the doped region; wherein a gate dielectric layer and a gate between the doped source region and the doped drain region are configured sequentially upwards from the top surface of the substrate; the gate is connected to a voltage to make the field effect transistor select wide dynamic range mode or high gain mode.

Photoelectric sensor, random accessible active pixel circuit, image sensor and camera

The present invention discloses a thin-film transistor structure with a three-dimensional fin-shape channel and a preparation method thereof. The preparation method includes following steps: (a) depositing and etching a bottom gate electrode on a substrate; (b) depositing a bottom dielectric layer at an upper part of a structure obtained from the step (a), and sequentially depositing a semiconductor film on the bottom dielectric layer; (c) etching the semiconductor film to obtain a fin-type channel; (d) respectively depositing an ohmic contact layer, a source electrode and a drain electrode on the semiconductor film located at both sides of the fin-shape channel, and etching; (e) depositing a top dielectric layer and a top gate electrode at an upper part of a structure obtained from the step (d); and (f) etching the top gate electrode, an completing a preparation of a thin-film transistor with a dual-gate three-dimensional fin-shape channel.

Thin-film transistor structure with three-dimensional fin-shape channel and preparation method thereof

Growing community of inventors

Guangzhou, China

Kai Wang