Taiwan Semiconductor Manufacturing Comp. Ltd.

Kai-Ting Huang

Keng-Chu Lin

Sung-Li Wang

Chih-Chien Chi

Shuen-Shin Liang

Chia-Hung Chu

Cheng-Wei Chang

Hsu-Kai Chang

Yi-Ying Liu

Chien-Shun Liao

The present disclosure describes a method for forming metallization layers that include a ruthenium metal liner and a cobalt metal fill. The method includes depositing a first dielectric on a substrate having a gate structure and source/drain (S/D) structures, forming an opening in the first dielectric to expose the S/D structures, and depositing a ruthenium metal on bottom and sidewall surfaces of the opening. The method further includes depositing a cobalt metal on the ruthenium metal to fill the opening, reflowing the cobalt metal, and planarizing the cobalt and ruthenium metals to form S/D conductive structures with a top surface coplanar with a top surface of the first dielectric.

Hybrid conductive structures

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Hsinchu, Taiwan

Kai-Ting Huang