Changxin Memory Technologies, Inc.

Kai Tian

Ling Zhu

Yuxia Wang

KangLing Ji

Hongwen Li

Enpeng Gao

Zengquan Wu

WeiBing Shang

Xianjun Wu

Liang Chen

Fengqin Zhang

Changhao Quan

Wei Jiang

Jing Xu

Weibing Shang

Yingdong Guo

Kangling Ji

Kai Li

Mengfan Li

A memory device includes: two calibration resistor interfaces connected to the same ZQ calibration resistor; and a first master chip, first slave chips, a second master chip, and second slave chips, which are commonly connected to the ZQ calibration resistor; in a command mode, a first signal receiver is used to receive a ZQ calibration command, a second signal receiver is used to receive and delay the ZQ calibration command, each of the first slave chips and the second slave chips starts to calibrate based on a respective ZQ flag signal, and in response to a respective ZQ calibration is completed, each of the first slave chips and the second slave chips sends a respective ZQ flag signal through second transmission terminals.

Memory device and ZQ calibration method

A circuit for calibration control includes an off-chip calibration circuit and a mode switching circuit, and the off-chip calibration circuit includes a preprocessing circuit and a mapping circuit. The preprocessing circuit is configured to receive a current set of environmental parameters, decode the current set of environmental parameters and output parameter decoding signals. The mapping circuit is configured to receive the parameter decoding signals and output a first calibration code according to the parameter decoding signals. The mode switching circuit is configured to receive a calibration mode signal and the first calibration code, and determine the first calibration code as a ZQ calibration code in a case where the calibration mode signal indicates an off-chip calibration mode.

Circuit for calibration control, electronic device and method for calibration control

Provided are an Electro Static Discharge (ESD) circuit and a memory. The ESD circuit includes: a detection circuit and multiple electrostatic discharge circuits. The detection circuit includes at least one sub-detection circuit connected between a first power end and a second power end. Each sub-detection circuit generates a sub-trigger signal based on a voltage change between the first power end and the second power end. The multiple electrostatic discharge circuits are connected between the first power end and the second power end. The multiple electrostatic discharge circuits are configured to be turned on according to the one or more sub-trigger signals.

Electro static discharge circuit and memory

A circuit for controlling calibration includes a process circuit, an off-chip calibration circuit and a mode switching circuit. The process circuit is configured to perform, in a first test mode, a process corner test on the memory to obtain a test result signal, the test result signal being used for determining a process corner parameter. The off-chip calibration circuit is configured to receive and store a first calibration code sent by a controller, the first calibration code being determined by the controller according to a current environment parameter of the memory and the process corner parameter.

Circuit for controlling calibration, electronic device, and method for controlling calibration

The present disclosure provides a memory device and a ZQ calibration method. The memory device includes a master chip and a plurality of slave chips. The master chip and the slave chips are each provided with a first transmission terminal and a second transmission terminal, where the first transmission terminals are connected to each other, and the second transmission terminals are connected to each other; and a first signal receiver and an address transmitter are provided in the master chip, and a second signal receiver is provided in the slave chip, the address transmitter is configured to send an address signal; a current slave chip sends the ZQ flag signal after completing the calibration; and the address transmitter is configured to send a next address signal.

An electrostatic protection circuit for a chip including a power supply pad and a ground pad, the electrostatic protection circuit includes: a monitoring assembly, configured to generate a trigger signal when an electrostatic pulse is present on the power supply pad; a discharge transistor connected between the power pad and the ground pad and configured to be turned on under control of the trigger signal to discharge electrostatic charges to the ground pad; and a control circuit connected to the monitoring assembly and configured to control a duration of the trigger signal generated by the monitoring assembly.

Electrostatic protection circuit for controlling a secondary monitoring unit by a control circuit

The present disclosure provides a memory device and a ZQ calibration method. The memory device includes: two calibration resistor interfaces connected to a same ZQ calibration resistor; a first master chip, a plurality of first slave chips cascaded together, a second master chip, and a plurality of second slave chips cascaded together that are all connected to the ZQ calibration resistor, where first transmission terminals and second transmission terminals are configured to transmit a ZQ flag signal; and an identification module configured to identify a priority calibration chip and a delay calibration chip, and identify the slave chip cascaded with the priority calibration chip as a primary slave chip and the slave chip cascaded with the delay calibration chip as a secondary slave chip.

An oscillator layout includes: a first row layout region constituted by sequentially arranging a second B layout region, second A layout region, third B layout region and third A layout region in parallel; and a second row layout region constituted by sequentially arranging a first A layout region, first B layout region, fourth A layout region and fourth B layout region in parallel. Inputs and outputs of the first A layout region, second A layout region, third A layout region and fourth A layout region constitute a first ring topology, inputs and outputs of the first B layout region and third B layout region constitute a second ring topology, inputs and outputs of the second B layout region and fourth B layout region constitute a third ring topology, the second ring topology and third ring topology are both electrically connected to the first ring topology.

Oscillator layout

A comparator circuit includes a first transistor, a second transistor, a load circuit, a first adjustment circuit and a second adjustment circuit. A terminal of the first transistor is coupled to a first node, another terminal of the first transistor is coupled to a first control node, and a gate of the first transistor is configured to receive a first control signal. A terminal of the second transistor is coupled to the first node, another terminal of the second transistor is coupled to a second control node, and a gate of the second transistor is configured to receive a second control signal. A terminal of the load circuit is coupled to a second node, and another terminal of the load circuit is coupled to the first control node and the second control node.

Comparator circuit, method for correcting mismatch and memory

An electrostatic protection circuit includes: a monitoring unit, a discharge unit, and a controllable voltage dividing unit, where the monitoring unit is connected to at least one probe pad, a discharge unit and a controllable voltage dividing unit, and the monitoring unit is configured to generate a first trigger signal in response to that an electrostatic pulse is present on any probe pad; the discharge unit connected between the at least one probe pad and the ground pad, and configured to form, under control of the first trigger signal, at least one path for discharging electrostatic charges to the ground pad; and the controllable voltage dividing unit is connected to the discharge unit and is configured to share a part of voltage of the first trigger signal for the discharge unit.

Electrostatic protection circuit and chip

The present disclosure provides an electrostatic discharge (ESD) protection circuit for a chip, including: a monitoring unit, configured to generate a trigger signal when there is an ESD pulse on a power supply pad; a plurality of controllable drive units, connected to the monitoring unit, and each of the controllable drive units being configured to switch an operating state under a control of a control signal, wherein the operating state includes an output state, and the output state refers to generating a drive signal according to the trigger signal; and a discharge transistor, connected to the plurality of controllable drive units, and configured to be turned on under a drive of the drive signal so as to discharge an electrostatic charge to the ground pad.

Electrostatic discharge protection circuit for chip

The present disclosure provides an electrostatic discharge (ESD) protection circuit for a chip, including: a monitoring unit, configured to generate a trigger signal when there is an ESD pulse on a power supply pad; a discharge transistor, located between the power supply pad and a ground pad, and configured to be turned on under a control of the trigger signal, so as to discharge an electrostatic charge to the ground pad; and a first controllable voltage division unit, connected to the discharge transistor, and configured to switch an operating mode under a control of a control signal. The operating mode includes a voltage division mode. When operating in the voltage division mode, the controllable voltage division unit is configured to carry a part of a voltage applied by the electrostatic charge to the discharge transistor.

The present disclosure provides an electrostatic discharge (ESD) protection network for a chip. The chip includes a first power supply pad, a second power supply pad, and a ground pad. The ESD protection network includes: a first ESD protection circuit, located between the first power supply pad and the ground pad, and configured to discharge an electrostatic charge when there is an ESD pulse caused by the electrostatic charge on the first power supply pad; a second ESD protection circuit, located between the second power supply pad and the ground pad, and configured to discharge an electrostatic charge when there is an ESD pulse caused by the electrostatic charge on the second power supply pad; and a third ESD protection circuit, configured to provide a discharge path for an electrostatic charge between the first power supply pad and the second power supply pad.

Electrostatic discharge protection network for chip

A calibration control circuit includes an off-chip calibration circuit, an on-chip calibration circuit and a mode switching circuit. The off-chip calibration circuit is configured to receive and store a first calibration code sent by a user. The on-chip calibration circuit is configured to receive an enable signal and perform a ZQ self-calibration process on the memory to obtain a second calibration code adapted to a current environmental parameter when the enable signal is in an active state. The mode switching circuit is configured to receive a calibration mode signal, the first calibration code and the second calibration code, and determine the first calibration code as a ZQ calibration code when the calibration mode signal indicates an off-chip calibration mode, or, determine the second calibration code as the ZQ calibration code when the calibration mode signal indicates an on-chip calibration mode.

A calibration circuit includes: a differential input circuit, configured to receive first and second oscillation signals, the first and second oscillation signals having the same frequency and opposite phases, duty cycle of the first oscillation signal and duty cycle of the second oscillation signal being in a first preset range, and the differential input circuit being configured to output first and internal signals; a comparison unit, connected to an output end of the differential input circuit and configured to compare duty cycle of the first internal signal and/or duty cycle of the second internal signal; and a logical unit, connected to the comparison unit and the differential input circuit, and configured to control the differential input circuit according to an output result of the comparison unit, such that the duty cycle of the first internal signal and/or the duty cycle of the second internal signal reaches a second preset range.

Growing community of inventors

Hefei, China

Kai Tian