Sun Harmonics, Ltd.

Other

Omnipv, Inc.

Kai Shum

Yuhang Ren

Zhuo Chen

Jian Jim Wang

John P Kenney

John A Midgley

William Pfenninger

Nemanja Vockic

Jin Zhang

Chivin Sun

Paifeng Luo

Zhi Huang

Chunhui Yu

Yizhi Li

This invention discloses a solution based synthesis of cesium tin tri-iodide (CsSnI). More specifically, the CsSnIis fabricated in an organic Perovskite precursor solvent. CsSnIare ideally suited for a wide range of applications such as light emitting and photovoltaic devices.

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This invention discloses a solution-based synthesis of cesium tin tri-iodide (CsSnI) film. More specifically, the invention is directed to a solution-based drop-coating synthesis of cesium tin tri-iodide (CsSnI) films. CsSnIfilms are ideally suited for a wide range of applications such as light emitting and photovoltaic devices.

An electro-optical device includes: (1) a first electrode layer; (2) a second electrode layer; and (3) a middle layer disposed between the first electrode layer and the second electrode layer. The middle layer includes a material having the formula: [ABXX'X&#x2033;], where A is selected from potassium, rubidium, and cesium; B is selected from germanium, tin, and lead; X, X&#x2032;, and X&#x2033; are independently selected from fluorine, chlorine, bromine, and iodine; a is in the range of 1 to 9; b is in the range of 1 to 5; a sum of x, x&#x2032;, and x&#x2033; is in the range of 1 to 9; and the material is at least one of n-doped and p-doped.

Optical devices including resonant cavity structures

This invention discloses a solution-based synthesis of cesium tin tri-iodide (CsSnI) film. More specifically, the invention is directed to a solution-based spray-coating synthesis of cesium tin tri-iodide (CsSnI) thin films. This invention is also directed to effective and inexpensive methods to synthesize the thin CsSnIfilms on large-area substrates such as glass, ceramics, glass, ceramic, silicon, and metal foils. CsSnIfilms are ideally suited for a wide range of applications such as light emitting and photovoltaic devices.

Described herein are optical devices including resonant cavity structures. In one embodiment, an optical fiber includes: (1) an elongated core including an outer surface; (2) an inner reflector disposed adjacent to the outer surface of the core and extending substantially along a length of the core; (3) an outer reflector spaced apart from the inner reflector and extending substantially along the length of the core; and (4) an emission layer disposed between the outer reflector and the inner reflector and extending substantially along the length of the core, the emission layer configured to emit radiation that is guided within the optical fiber.

This invention discloses a solid-based synthesis of cesium tin tri-iodide (CsSnI). More specifically, the CsSnIis fabricated in a 3 zone high temperature resisting tube by the solid-phase sintering method. CsSnIare ideally suited for a wide range of applications such as light emitting and photovoltaic devices.

A method of forming an compound semiconductor thin film of chalcopyrite structure includes the steps of heating up elemental VI powder in a first chamber to produce VI vapor flux. The VI vapor flow is introduced into a second chamber and an Argon plasma is utilized to crack large molecular VI fractions to generate small VI species. The small molecule VI species are homogeneously deposited on the metallic I-III precursor layers and the precursor film is sealed into a graphite box and transferred to an annealing chamber to create an absorber layer with a large grain size and good crystalline structure.

Perovskite semiconductor thin films and the method of making Perovskite semiconductor thin films are disclosed. Perovskite semiconductor thin films were deposited on inexpensive substrates such as glass and ceramics. CsSnIfilms contained polycrystalline domains with typical size of 300 nm and larger. It is confirmed experimentally that CsSnIcompound in its black phase is a direct band-gap semiconductor, consistent with the calculated band structure from the first principles.

Perovskite semiconductor thin film and method of making thereof

Ternary and quaternary Chalcopyrite CuInGaSSe(CIGS, where 0&#x2266;x and y&#x2266;1) nanoparticles were synthesized from molecular single source precursors (SSPs) by a one-pot reaction in a high boiling solvent using salt(s) (i.e. NaCl as by-product) as heat transfer agent via conventional convective heating method. The nanoparticles sizes were 1.8 nm to 5.2 nm as reaction temperatures were varied from 150&#xb0; C. to 190&#xb0; C. with very high-yield. Tunable nanoparticle size is achieved through manipulation of reaction temperature, reaction time, and precursor concentrations. In addition, the method developed in this study was scalable to achieve ultra-large quantities production of tetragonal and quaternary Chalcopyrite CIGS nanoparticles.

Growing community of inventors

Orefield, PA, United States of America

Kai Shum