Industrial Technology Research Institute

National Applied Research Laboratories

Kai-Shin Li

Mean-Jue Tung

Jia-Min Shieh

Shi-Yuan Tong

Wen-Kuan Yeh

Min-Cheng Chen

Bo-Wei Wu

Minn-Tsong Lin

Yin-Ming Chang

A field-effect transistor structure having two-dimensional transition metal dichalcogenides includes a substrate, a source/drain structure, a two-dimensional (2D) channel layer, and a gate layer. The source/drain structure is disposed on the substrate and has a surface higher than a surface of the substrate. The 2D channel layer is disposed on the source and the drain and covers the space between the source and the drain. The gate layer is disposed between the source and the drain and covers the 2D channel layer. The field-effect transistor having two-dimensional transition metal dichalcogenides is a planar field-effect transistor or a fin field-effect transistor.

Field-effect transistor structure having two-dimensional transition metal dichalcogenide

A tunneling magnetoresistance device with high magnetoimpedance effect, a first ferromagnetic layer, a second ferromagnetic layer, and a tunnel barrier layer which is located between the first ferromagnetic layer and the second ferromagnetic layer. Wherein an alternating current is applied to the tunneling magnetoresistance device, the tunneling magnetoresistance device has at least 100% variation of real components between an applied first alternating frequency and an applied second alternating frequency, at least 25% variation of imaginary components below the first alternating frequency, and at least 8.5% variation of magneto capacitance (MC) ratio which are generated along the magnetization direction.

Tunneling magnetoresistance device with high magnetoimpedance (MI) effect

Growing community of inventors

Hsinchu, Taiwan

Kai-Shin Li