Taiwan Semiconductor Manufacturing Comp. Ltd.

Kai-Shiang Kuo

Hung-Wen Su

Chih-Chien Chi

Chen-Yuan Kao

Yao-Jen Chang

Po-Cheng Shih

Jun-Yi Ruan

Cheng-Hui Weng

Huei-Wen Hsieh

Chun-Sheng Chen

Tze-Liang Lee

Chung-Chi Ko

Chia-Cheng Chou

Chun-Chieh Lin

Wen-Hsuan Chen

Ya-Lien Lee

Ken-Yu Chang

Cheng-Lun Tsai

Jen-Wei Liu

Yen-Chun Lin

Shu-Cheng Chin

Yao-Min Liu

Ming-Yuan Gao

Ming-Chou Chiang

A method of forming a semiconductor device includes forming an opening in a dielectric layer, and forming a barrier layer in the opening. A combined liner layer is formed over the barrier layer by first forming a first liner layer over the barrier layer, and forming a second liner layer over the first liner layer, such that the first liner layer and the second liner layer intermix. A conductive material layer is formed over the combined liner layer, and a thermal process is performed to reflow the conductive material layer.

Bi-layer alloy liner for interconnect metallization and methods of forming the same

A device, structure, and method are provided whereby an insert layer is utilized to provide additional support for weaker and softer dielectric layer. The insert layer may be applied between two weaker dielectric layers or the insert layer may be used with a single layer of dielectric material. Once formed, trenches and vias are formed within the composite layers, and the insert layer will help to provide support that will limit or eliminate undesired bending or other structural motions that could hamper subsequent process steps, such as filling the trenches and vias with conductive material.

Multi-layer film device and method

In some implementations, one or more semiconductor processing tools may form a via within a substrate of a semiconductor device. The one or more semiconductor processing tools may deposit a ruthenium-based liner within the via. The one or more semiconductor processing tools may deposit, after depositing the ruthenium-based liner, a copper plug within the via.

Ruthenium-based liner for a copper interconnect

An opening is formed through a dielectric material layer to physically expose a top surface of a conductive material portion in, or over, a substrate. A metallic nitride liner is formed on a sidewall of the opening and on the top surface of the conductive material portion. A metallic adhesion layer including an alloy of copper and at least one transition metal that is not copper is formed on an inner sidewall of the metallic nitride liner. A copper fill material portion may be formed on an inner sidewall of the metallic adhesion layer. The metallic adhesion layer is thermally stable, and remains free of holes during subsequent thermal processes, which may include reflow of the copper fill material portion. An additional copper fill material portion may be optionally deposited after a reflow process.

Thermally stable copper-alloy adhesion layer for metal interconnect structures and methods for forming the same

A device, structure, and method are provided whereby an insert layer is utilized to provide additional support for surrounding dielectric layers. The insert layer may be applied between two dielectric layers. Once formed, trenches and vias are formed within the composite layers, and the insert layer will help to provide support that will limit or eliminate undesired bending or other structural motions that could hamper subsequent process steps, such as filling the trenches and vias with conductive material.

Interconnect structure and method

In a method of fabricating a semiconductor device, an opening is formed inside a dielectric layer above a semiconductor substrate. The opening has a wall. At least one diffusion barrier material is then formed over the wall of the opening by at least two alternating steps, which are selected from the group consisting of a process of physical vapor deposition (PVD) and a process of atomic layer deposition (ALD). A liner layer is formed over the at least one diffusion barrier material.

Method of forming hybrid diffusion barrier layer and semiconductor device thereof

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Hsinchu, Taiwan

Kai-Shiang Kuo