Asm IP Holding B.v.

Kai Okabe

Takashi Yoshida

Zecheng Liu

Methods of forming a silicon oxycarbide layer on a surface of a substrate are disclosed. Exemplary methods include providing an oxygen-free reactant to a reaction chamber and performing one or more deposition cycles, wherein each deposition cycle includes providing a silicon precursor to the reaction chamber for a silicon precursor pulse period and providing pulsed plasma power for a plasma power period to form the silicon oxycarbide layer.

Growing community of inventors

Kawasaki, Japan

Kai Okabe