Unimicron Technology Corporation

Htc Corporation

Kai-Ming Yang

Cheng-Ta Ko

Pu-Ju Lin

Tzyy-Jang Tseng

Chen-Hao Lin

Chia-Yu Peng

John Hon-Shing Lau

Yu-Hua Chen

Chi-Hai Kuo

Ra-Min Tain

Chien-Tsai Li

Wang-Hsiang Tsai

Wen-Yu Lin

Ping-Tsung Lin

Chia-Hao Chang

Chin-Sheng Wang

Shao-Chien Lee

Guang-Hwa Ma

Jeng-Ting Li

Cheng-Hui Wu

Bo-Cheng Lin

Pei-Chi Chen

Tzu-Nien Lee

Chia-Fu Hsu

Chih-Lun Wang

Wen Yu Lin

A co-packaged structure for optics and electrics includes a substrate, an optical module and an electrical connection layer. The optical module includes a carrier and an optical transceiver unit. The carrier is mounted on the substrate. The optical module is mounted on the carrier. The electrical connection layer is mounted on the substrate, and the carrier is electrically connected with a circuitry on the substrate through the electrical connection layer. A plurality of fiber accommodation through hole are formed on the substrate and correspond to the optical transceiver unit.

Co-packaged structure for optics and electrics

A chip package includes a redistribution layer, a chip, and an encapsulation member. The redistribution layer includes an insulation part, a plurality of first pads and a plurality of second pads, where the insulation part has a first surface, a second surface opposite to the first surface, and a side surface between the first surface and the second surface. The first pads and the second pads are located at the first surface and the second surface respectively. The chip is disposed on the first surface and electrically connected to the first pads. The encapsulation member wraps the chip and the redistribution layer, and covers the first surface and the side surface, where the encapsulation member exposes the second pads, and the encapsulation member is not flush with the first surface and the side surface.

Chip package and method of manufacturing the same

A method of manufacturing package structure includes following steps. An insulating composite layer is formed on a metal layer of a carrier board. A chip packaging module including a sealant and a first chip embedded therein is disposed on the insulating composite layer, in which the first chip has a plurality of conductive pads. A first circuit layer module including a dielectric layer and a circuit layer is formed on the chip packaging module, in which the circuit layer is on the dielectric layer and electrically connected to the conductive pads through a conductive vias in the dielectric layer. A second chip is disposed on the first circuit layer module. A second circuit layer module is formed on the first circuit layer module and the second chip. A protecting layer is formed on the second circuit layer module.

Manufacturing method of package structure

A circuit board structure includes a carrier, a thin film redistribution layer disposed on the carrier, solder balls electrically connected to the thin film redistribution layer and the carrier, and a surface treatment layer. The thin film redistribution layer includes a plurality of pads, a first dielectric layer, a first metal layer, a second dielectric layer, a second metal layer, and a third dielectric layer. A plurality of first openings of the first dielectric layer expose part of the pads, and a first surface of the first dielectric layer is higher upper surfaces of the pads. The solder balls are disposed in a plurality of third openings of the third dielectric layer and are electrically connected to the second metal layer and the carrier. The surface treatment layer is disposed on the upper surfaces, and a top surface of the surface treatment layer is higher than the first surface.

Circuit board structure and manufacturing method thereof

An integrated circuit (IC) package structure includes a chip, a redistribution layer (RDL) structure, a molding compound structure and an electromagnetic interference (EMI) shielding structure. The RDL structure is formed on the chip and electrically connected thereto. The molding compound layer is provided on outer surfaces of the chip and the RDL structure. The EMI shielding structure is provided on outer surfaces of the molding compound structure. The molding compound structure layer provided on outer surfaces of the chip and the RDL structure provide protection and reinforcement to multiple faces of the IC package structure; and the EMI shielding structure provided on outer surfaces of the molding compound structure provides EMI protection to multiple faces of the chip and the RDL structure.

Integrated circuit package structure

A light-emitting diode package structure includes a heat dissipation substrate, a redistribution layer, and multiple light-emitting diodes. The heat dissipation substrate includes multiple copper blocks and a heat-conducting material layer. The copper blocks penetrate the heat-conducting material layer. The redistribution layer is disposed on the heat dissipation substrate and electrically connected to the copper blocks. The light-emitting diodes are disposed on the redistribution layer and are electrically connected to the redistribution layer. A side of the light-emitting diodes away from the redistribution layer is not in contact with any component.

Light-emitting diode package structure and manufacturing method thereof

The invention discloses a glass carrier having a protection structure, comprising a glass body and a protection layer. The glass body has a top surface, a bottom surface, and a lateral surface. The protection layer covers the lateral surface of the glass body. The protection layer is a hard material with a stiffness coefficient higher than a stiffness coefficient of the glass body. The invention further discloses a manufacturing method of a glass carrier having a protection structure, comprising the following steps: covering the protection layer around the lateral surface of the glass body, wherein the protection layer is the hard material with the stiffness coefficient higher than the stiffness coefficient of the glass body.

Glass carrier having protection structure and manufacturing method thereof

A circuit board structure includes a carrier, a thin film redistribution layer disposed on the carrier, solder balls electrically connected to the thin film redistribution layer and the carrier, and a surface treatment layer. The thin film redistribution layer includes a first dielectric layer, pads, a first metal layer, a second dielectric layer, a second metal layer, and a third dielectric layer. A top surface of the first dielectric layer is higher than an upper surface of each pad. The first metal layer is disposed on a first surface of the first dielectric layer. The second dielectric layer has second openings exposing part of the first metal layer. The second metal layer extends into the second openings and is electrically connected to the first metal layer. The third dielectric layer has third openings exposing part of the second metal layer. The surface treatment layer is disposed on the upper surfaces.

A circuit board structure includes a circuit substrate having opposing first and second sides, a redistribution structure disposed at the first side, and a dielectric structure disposed at the second side. The circuit substrate includes a first circuit layer disposed at the first side and a second circuit layer disposed at the second side. The redistribution structure is electrically coupled to the circuit substrate and includes a first leveling dielectric layer covering the first circuit layer, a first thin-film dielectric layer disposed on the first leveling dielectric layer and having a material different from the first leveling dielectric layer, and a first redistributive layer disposed on the first thin-film dielectric layer and penetrating through the first thin-film dielectric layer and the first leveling dielectric layer to be in contact with the first circuit layer. The dielectric structure includes a second leveling dielectric layer disposed below the second circuit layer.

A method of manufacturing package structures includes providing a carrier including a supporting layer, a metal layer, and a release layer between the supporting layer and the metal layer at first. Afterwards, a composite layer of a non-conductor inorganic material and an organic material is disposed on the metal layer. Then, a chip embedded substrate is bonded on the composite layer. Afterwards, an insulating protective layer having openings is formed on the circuit layer structure and exposes parts of the circuit layer structure in the openings. Afterwards, the supporting layer and the release layer are removed to form two package substrates. Then, each of the package substrates is cut.

An integrated circuit (IC) package structure includes a chip, a redistribution layer (RDL) structure, a molding compound structure and an electromagnetic interference (EMI) shielding structure. The RDL structure is formed on the chip and electrically connected thereto. The molding compound layer is provided on outer surfaces of the chip and the RDL structure. The EMI shielding structure is provided on outer surfaces of the molding compound structure. The molding compound structure layer provided on outer surfaces of the chip and the RDL structure provide protection and reinforcement to multiple faces of the IC package structure; and the EMI shielding structure provided on outer surfaces of the molding compound structure provides EMI protection to multiple faces of the chip and the RDL structure. The IC package structure has upgraded structural strength, reliability and stability in use. A method of manufacturing the above IC package structure is also introduced.

Integrated circuit package structure and method of manufacturing the same

A chip packaging structure includes a chip, a redistribution layer, a solder ball, an encapsulant, and a stress buffer layer. The chip has an active surface and a back surface opposite to each other, and a peripheral surface connected to the active surface and the back surface. The redistribution layer is disposed on the active surface of the chip. The solder ball is disposed on the redistribution layer, and the chip is electrically connected to the solder ball through the redistribution layer. The encapsulant encapsulates the active surface and the back surface of the chip, the redistribution layer, and part of the solder ball. The stress buffer layer at least covers the peripheral surface of the chip. An outer surface of the stress buffer layer is aligned with a side surface of the encapsulant.

Chip packaging structure and manufacturing method thereof

A manufacturing method of a package structure is provided, which includes the following steps. A carrier having a surface is provided. A copper foil layer is laminated on the surface of the carrier. A subtractive process is performed on the copper foil layer to form a copper foil circuit layer on the carrier. The copper foil circuit layer exposes a part of the surface of the carrier. A build-up structure layer is formed on the copper foil circuit layer and the surface of the carrier. A first surface of the copper foil circuit layer is aligned with a second surface of the build-up structure layer. At least one electronic component is disposed on the build-up structure layer. A package colloid is formed to cover the electronic component and the build-up structure layer. The carrier is removed to expose the first surface of the copper foil circuit layer.

Package structure and manufacturing method thereof

A package structure includes at least one first redistribution layer, at least one second redistribution layer, a chip pad, a solder ball pad, a chip, a solder ball, and a molding compound. The first redistribution layer includes a first dielectric layer and a first redistribution circuit that fills a first opening and a second opening of the first dielectric layer. The first dielectric layer is aligned with the first redistribution circuit. The second redistribution layer includes a second and a third dielectric layers and a second redistribution circuit. The third dielectric layer is aligned with the second redistribution circuit. The chip pad and the solder ball pad are electrically connected to the first and the second redistribution circuits respectively. The chip and the solder ball are disposed on the chip pad and the solder ball pad respectively. The molding compound at least covers the chip and the chip pad.

A light-emitting package includes an encapsulating member, a plurality of light-emitting components disposed in the encapsulating member, a plurality of first electrode pads, a plurality of second electrode pads, and a plurality of conductive connection structures. The encapsulating member has a first surface and a second surface opposite to each other. Each light-emitting component has a light-emitting surface exposed on the first surface. Both the first electrode pads and the second electrode pads are exposed on the second surface. A first bonding surface of each first electrode pad and a second bonding surface of each second electrode pad are both flush with the second surface. The light-emitting components disposed on the first electrode pads are electrically connected to the first electrode pads. The conductive connection structures passing through the encapsulating member are electrically connected to the light-emitting components and the second electrode pads.

Growing community of inventors

Hsinchu County, Taiwan

Kai-Ming Yang