Stats Chippac Pte. Ltd.

Qualcomm Incorporated

Tdk Corporation

Kai Liu

Robert Charles Frye

Yaojian Lin

Jonghae Kim

Je-Hsiung Lan

Nosun Park

Gwang Kim

YongTaek Lee

ByungHoon Ahn

HyunTai Kim

Kang Chen

Pandi Chelvam Marimuthu

Jui-Yi Chiu

Changhan Hobie Yun

Mario Francisco Velez

Ranadeep Dutta

Rui Tang

Chenliang Du

Chunhu Zhang

Roy Chiu

Richard Kommrusch

An integrated circuit (IC) includes a substrate and a first through substrate via (TSV) in the substrate. The first TSV includes a first metal-insulator-metal (MIM) capacitor. The first MIM capacitor includes a first plate composed of a first metallization layer on an inner surface of the first TSV. The first MIM capacitor includes a MIM insulator layer on the first plate. The first MIM capacitor includes a second plate composed of a second metallization layer on the MIM insulator layer. The IC includes a 3D inductor. The 3D inductor includes a second TSV in the substrate. The 3D inductor includes a first trace on a first surface of the substrate, coupled to a first end of the second TSV. The 3D inductor further includes a second trace on a second surface of the substrate and coupled to a second end of the second TSV and a second end of the first TSV.

Capacitor embedded 3D resonator for broadband filter

A compact, hybrid, acoustic wave filter structure is disclosed. In an aspect an apparatus comprises a substrate; a first, multi-layer metallization structure disposed above the substrate; a plurality of pillar structures disposed above, and electrically coupled to, the first metallization structure; a second metallization structure disposed above, an electrically coupled to, the plurality of pillar structures. An acoustic unit (AU) is disposed between the first and second metallization structures and adjacent to at least one of the pillar structures. The AU comprises a surface acoustic wave or bulk acoustic wave acoustic resonator that is electrically coupled to a capacitor and an inductor. The capacitor comprises a metal-insulation-metal capacitor that is formed from a portion of the first metallization structure and optionally also from at least one pillar structure and a portion of the second metallization structure. The inductor is comprised of a second portion of the first metallization structure.

Compact hybrid acoustic wave filter structure

A device comprising a die substrate, a plurality of interconnects located over the die substrate, wherein the plurality of interconnects are configured to operate as an inductor, at least one magnetic layer that surrounds at least part of the plurality of interconnects; and at least one dielectric layer that surrounds the at least one magnetic layer.

Integrated device and integrated passive device comprising magnetic material

Aspects of the disclosure are directed to a bandpass filter including a first, second, third and fourth resonators, wherein the second and third resonators are in parallel, wherein the first resonator includes a first and second terminals, wherein the second resonator includes a second resonator top terminal and a second resonator bottom terminal, wherein the third resonator includes a third resonator top terminal and a third resonator bottom terminal, wherein the fourth resonator includes a third terminal and a fourth terminal; wherein the first terminal is coupled to the second resonator top terminal, wherein the second terminal is coupled to the third resonator top terminal, wherein the third terminal is coupled to the third resonator bottom terminal, wherein the fourth terminal is coupled to the second resonator bottom terminal; a first inductor coupled to the first and third terminals; and a second inductor coupled to the second and fourth terminals.

Wideband filter with resonators and inductors

In an aspect, an apparatus is disclosed that includes a surface-mounted integrated circuit package housing an active oscillator circuit; an integrated ceramic resonator formed from a ceramic substrate having an upper planar surface receiving the surface-mounted integrated circuit package, the integrated ceramic resonator including a plurality of conductive walls forming a conductive periphery of a ceramic cavity in the ceramic substrate, a conductive rod extending vertically into the ceramic cavity, wherein the conductive rod is isolated from contact with the conductive periphery of the ceramic cavity, a first conductive material extending vertically through the upper planar surface of the ceramic substrate for connecting the conductive periphery of the ceramic cavity to the surface-mounted integrated circuit package housing the active oscillator circuit; and a second conductive material extending through the upper planar surface of the ceramic substrate for connecting the conductive rod to the surface-mounted integrated circuit package.

Radio frequency oscillator with ceramic resonator and surface-mounted integrated circuit package

Disclosed is a radio frequency (RF) filter that vertically integrates an acoustic die with inductors formed in one or more layers above the acoustic die. The acoustic die may be over-molded so that the acoustic dome, important for maintaining acoustic integrity, may be protected.

Backend and acoustic process integration for high-Q filter

An integrated device that includes a die substrate comprising a plurality of transistors, an interconnection portion coupled to the die substrate, and a packaging portion coupled to the interconnection portion. The interconnection portion includes at least one die dielectric layer and a plurality of die interconnects coupled to the plurality of transistors. The packaging portion includes at least one magnetic layer and a plurality of metallization interconnects coupled to the plurality of die interconnects.

An integrated circuit (IC) includes a substrate and a thin film resistor (TFR) device structure. The TFR device structure includes a first portion of a first metallization layer and a second portion of the first metallization layer on the substrate. The TFR device structure also includes a first portion of a dielectric layer on the first portion of the first metallization layer and a second portion of the dielectric layer on the second portion of the first metallization layer. The TFR device structure further includes a first portion of a second metallization layer on the first portion of the dielectric layer and a second portion of the second metallization layer on the second portion of the dielectric layer. The TFR device structure also includes a first portion of a third metallization layer coupling the first portion of the second metallization layer to the second portion of the second metallization layer.

Thin film resistor (TFR) device structure for high performance radio frequency (RF) filter design

Disclosed is a radio frequency (RF) filter that vertically integrates an acoustic wave filter with an integrated passive device (IPD) filter. The acoustic wave filter provides selectivity at fundamental frequency band while the IPD filter provides rejection at harmonic frequency bands.

High harmonic performance radio frequency filter

A semiconductor device has a semiconductor die and an encapsulant deposited over the semiconductor die. A first conductive layer is formed with an antenna over a first surface of the encapsulant. A second conductive layer is formed with a ground plane over a second surface of the encapsulant with the antenna located within a footprint of the ground plane. A conductive bump is formed on the ground plane. A third conductive layer is formed over the first surface of the encapsulant. A fourth conductive layer is formed over the second surface of the encapsulant. A conductive via is disposed adjacent to the semiconductor die prior to depositing the encapsulant. The antenna is coupled to the semiconductor die through the conductive via. The antenna is formed with the conductive via between the antenna and semiconductor die. A PCB unit is disposed in the encapsulant.

Antenna in embedded wafer-level ball-grid array package

A semiconductor device has a substrate and RF FEM formed over the substrate. The RF FEM includes an LC low-pass filter having an input coupled for receiving a transmit signal. A Tx/Rx switch has a first terminal coupled to an output of the LC filter. A diplexer has a first terminal coupled to a second terminal of the Tx/Rx switch and a second terminal for providing an RF signal. An IPD band-pass filter has an input coupled to a third terminal of the Tx/Rx switch and an output providing a receive signal. The LC filter includes conductive traces wound to exhibit inductive and mutual inductive properties and capacitors coupled to the conductive traces. The IPD filter includes conductive traces wound to exhibit inductive and mutual inductive properties and capacitors coupled to the conductive traces. The RF FEM substrate can be stacked over a semiconductor package containing an RF transceiver.

Semiconductor device and method of forming RF FEM with LC filter and IPD filter over substrate

A semiconductor device has a substrate and RF coupler formed over the substrate. The RF coupler has a first conductive trace with a first end coupled to a first terminal of the semiconductor device, and a second conductive trace with a first end coupled to a second terminal of the semiconductor device. The first conductive trace is placed in proximity to a first portion of the second conductive trace. An integrated passive device is formed over the substrate. A second portion of the second conductive trace operates as a circuit component of the integrated passive device. The integrated passive device can be a balun or low-pass filter. The RF coupler also has a first capacitor coupled to the first terminal of the semiconductor device, and second capacitor coupled to a third terminal of the semiconductor device for higher directivity. The second conductive trace is wound to exhibit an inductive property.

Semiconductor device and method of forming directional RF coupler with IPD for additional RF signal processing

A semiconductor device has a first semiconductor die. A first inductor is formed over the first semiconductor die. A second inductor is formed over the first inductor and aligned with the first inductor. An insulating layer is formed over the first semiconductor die and the first and second inductors. A conductive bridge is formed over the insulating layer and electrically connected between the second inductor and the first semiconductor die. In one embodiment, the semiconductor device has a second semiconductor die and a conductive layer is formed between the first and second semiconductor die. In another embodiment, a capacitor is formed over the first semiconductor die. In another embodiment, the insulating layer has a first thickness over a footprint of the first semiconductor die and a second thickness less than the first thickness outside the footprint of the first semiconductor die.

Semiconductor device including integrated passive device formed over semiconductor die with conductive bridge and fan-out redistribution layer

A semiconductor wafer contains semiconductor die. A first conductive layer is formed over the die. A resistive layer is formed over the die and first conductive layer. A first insulating layer is formed over the die and resistive layer. The wafer is singulated to separate the die. The die is mounted to a temporary carrier. An encapsulant is deposited over the die and carrier. The carrier and a portion of the encapsulant and first insulating layer is removed. A second insulating layer is formed over the encapsulant and first insulating layer. A second conductive layer is formed over the first and second insulating layers. A third insulating layer is formed over the second insulating layer and second conductive layer. A third conductive layer is formed over the third insulating layer and second conductive layer. A fourth insulating layer is formed over the third insulating layer and third conductive layer.

Growing community of inventors

Phoenix, AZ, United States of America

Kai Liu