Enkris Semiconductor, Inc.

Yotrio Group Co., Ltd.

Crystal Pharmatech Co., Ltd.

Crystal Pharmaceutical (suzhou) Co., Ltd.

Southeast University

Inspur Suzhou Intelligent Technology Co., Ltd

Jiangsu Hengrui Medicine Company Ltd.

Suzhou Touchstone International Medical Science Co., Ltd.

Other

Realtek Semiconductor Inc.

State Grid Corporation of China

Tineco Intelligent Technology Co., Ltd.

Dreame Innovation Technology (suzhou) Co., Ltd.

Nanjing University of Aeronautics and Astronautics

Touchstone International Medical Science Co., Ltd.

Kai Liu

Yanfeng Zhang

Minhua Chen

Xiaoyu Zhang

Kai Cheng

Po Zou

Wei Hua

Shuicheng Ding

Wei Xu

Kai Sun

Liangliang Fan

Wangdong Chen

Zhongde Shan

Chao Zhang

Jinqiu Wang

Yuanjun Shi

Zongshun Wang

Zhonglin Wang

Meng Yang

Neng-Hsien Lin

Liying Zhou

Lejun Liu

Yuchen Wang

Teng Shan

Chen Shen

Congze Fan

Wenzhe Song

Yiwei Chen

Jinghua Zheng

Ting Liu

Yongwang Pei

Kouji Iio

Fengping Xiao

Min Sun

Likun Wang

Jiaoyang Li

Yuxia Wu

Zheng Xu

Daisuke Hashino

Mingyang Ding

Hongjun Chen

Huaiqiang Ren

Li Chen

Lihua Yan

Haiping Shen

Kai Pan

Yixin Bai

Lin-Miao Chen

Zhiyu Chen

Simei Huang

Xiangke Wang

Lanyong Yin

Cunbo Yang

Yi Fan

Chaochao Sun

Chen Xu

Yueyue Qian

Rong Yin

Jiajie Yan

Zongmao Yang

Dongdong Zhang

Xu Xu

He Xu

Liping Huang

Xu Weng

Ying-Dian Xiang

Wenjun Jiang

Xue-Song Gao

Pan Tang

Wen Huo

Qiong Sun

Han Sun

Zongying Gao

Wentao Yan

Yong Pei

Guo-Hui Yuan

Jian-Hui Wang

Congchao Xu

Caiyun Pan

Zhirong Mo

Ailing Chen

Yao Feng

Houfu Lin

Ming-Chang Wu

Xu Zhang

Hongjun Wang

Xiang Li

Yanan Liu

Yi Shan

Xun Wu

Taketo Yamamoto

Gong Li

Yanping Zhao

Yuanyuan Jiang

Yeming Wang

Ning Shao

Feng Zhou

Chenglin Liu

Haoyu Wang

Mengdi Wang

A linear Hall-based eccentricity diagnosis method and detection system for a permanent magnet motor. First, three linear Hall elements are mounted in stator slots at the same space interval, respectively; second, analog signals output by the three-phase linear Hall are converted into digital signals by means of a digital signal processor, and the digital signals are converted into a quadrature signal by means of linear combination; then, a negative sequence signal and a sideband signal are extracted from the quadrature signal by means of a complex factor filter; then the amplitude of the negative sequence signal and the amplitude of the sideband signal are extracted by means of synchronous reference frame phase-locked loops as a static eccentricity indicator and a dynamic eccentricity indicator; finally, percentages representing the degrees of eccentricity are calculated from the static eccentricity indicator and the dynamic eccentricity indicator in the digital signal processor.

Linear hall-based eccentricity diagnosis method and detection system for permanent magnet motor

The present disclosure provides a resonant tunneling diode including: a first barrier layer; a second barrier layer; a potential well layer between the first barrier layer and the second barrier layer, materials of the first barrier layer, the second barrier layer, and the potential well layer including a group III nitride, a material of the potential well layer including a gallium element; a first barrier layer between the first barrier layer and the potential well layer; and/or a second barrier layer between the second barrier layer and the potential well layer.

Resonant tunneling diodes and manufacturing methods thereof

Disclosed are a method and system for measuring a flux-switching electric motor rotor angle on the basis of linear Hall. The method comprises: firstly, selecting four linear Hall sensors and respectively mounting same in four slots of a stator; a first linear Hall sensor is mounted in any slot of the stator, and a second linear Hall sensor is spaced apart from the first linear Hall sensor by Nslots in a unified direction; Nis an even number, and N≠ks/(2); a third linear Hall sensor is spaced apart from the first linear Hall sensor by Nslots; Nis an odd number, and N=(2−1)s/(2); and a fourth linear Hall sensor is spaced apart from the second linear Hall sensor by Nslots; and then calculating an electric motor rotor angle according to voltage signals of the four linear Hall sensors.

Method and system for measuring flux-switching electric motor rotor angle on basis of linear hall sensors

Provided are a filter cleaning apparatus and a filter cleaning system. The filter cleaning apparatus includes a shielding body, and at least one cleaning strip is arranged on an inner wall of the shielding body, a dust collection connector is arranged on the shielding body, one end of the dust collection connector is communicated with a dust collection apparatus, and the other end of the dust collection connector is communicated with a cavity in the shielding body. By arranging a dust collection connector on the filter cleaning apparatus, when the filter is cleaned, the dirt may be sucked into the dust collection apparatus in real time by the dust collection connector.

Filter cleaning apparatus and filter cleaning system

The present application provides a cleaning device, a floor brush assembly and an installation assembly of rolling brush. The cleaning device includes a rolling brush assembly and a connection assembly, the rolling brush assembly and the connection assembly are connected by an installation assembly, and the installation assembly includes a control rod; when the control rod moves, the rolling brush assembly and the connection assembly can be disengaged, so that when replacing the rolling brush assembly, the connection assembly connected with the rolling brush assembly is not required to be replaced, and the rolling brush assembly can be installed or disassembled more conveniently through the installation assembly.

Cleaning device, floor brush assembly and installation assembly of rolling brush

The present disclosure provides a semiconductor structure and a forming method thereof. The semiconductor structure includes: a substrate and an epitaxial layer disposed on the substrate. At least a part of the epitaxial layer is doped with metal atoms, and the doping concentration of the metal atoms at the bottom surface of the epitaxial layer near the substrate is larger than 1×10atoms/cm.

Semiconductor structure and forming method thereof

Paint spraying system

A virtual machine management method and apparatus, a device, and a readable storage medium. The virtual machine management method is applied to a private cloud, and comprises: acquiring a SELinux label, the SELinux label comprising five elements: User, Role, Type, Sensitivity, and Category (S); setting elements other than Category in the SELinux label as default values (S); assigning different values to Category according to a preset Category variable combination so as to obtain multiple non-duplicate label groups (S); and configuring each label group to a virtual machine in the private cloud, so that virtual machines configured with the same label group communicate with each other, and virtual machines configured with different label groups are isolated from each other (S).

Virtual machine management method and apparatus, device, and readable storage medium

Disclosed in the present disclosure is an out-of-order data generation method. The method comprises: creating a plurality of threads; instructing all threads to acquire transmission permission in a manner of acquisition after random delay, determining, after any thread acquires the transmission permission, a thread as the current thread, and instructing the current thread to drive currently generated data and a corresponding data ID to an AXI bus for reading by a receiving end, so as to implement an out-of-order reading test on the basis of the data and corresponding data identifier that are read by the receiving end; and after sending, by the current thread, of the currently generated data and the corresponding data identifier ends, recycling the transmission permission, and returning to execute the step of instructing the all threads to acquire the transmission permission in the manner of acquisition after the random delay.

Out-of-order data generation method and apparatus, and device and storage medium

A semiconductor structure and a manufacturing method therefor are provided by embodiments of the present application. A buffer layer is disposed on a substrate layer, and the buffer layer includes a first buffer layer and a second buffer layer. By doping a transition metal in the first buffer layer, a deep level trap may be formed to capture background electrons, and diffusion of free electrons toward the substrate may also be avoided. In the second buffer layer, by decreasing a doping concentration of the transition metal or not doping intentionally the transition metal, a tailing effect is avoided and current collapse is prevented. By doping periodically C in the buffer layer, C may be as an acceptor impurity to compensate the background electrons, and then a concentration of the background electrons is reduced.

Semiconductor structure and manufacturing method therefor

A cable includes a first plug, a second plug, and a controller. The first plug is configured to be connected with a host. The second plug is configured to be connected with a device. The controller is coupled between the first plug and the second plug, and is configured to monitor a connection message transferred between the host and the device, and to determine, according to the connection message, a transfer mode that the host and the device is to enter, and to set a plurality of electrical parameters to be a corresponding one set in a plurality of sets of predetermined parameters.

Cable, controller, and control method

The present disclosure relates to a pharmaceutical composition. Specifically, a pharmaceutical composition of abiraterone acetate is provided, wherein a 300 mg dose of abiraterone acetate is bioequivalent to a 1000 mg dose of Zytiga&#xae; in healthy male subjects in a fasting state.

Pharmaceutical composition

Embodiments of the present application provide a semiconductor structure and a manufacturing method therefor. A buffer layer is disposed on a substrate layer, and the buffer layer includes a first buffer layer and a second buffer layer. By doping a transition metal in the first buffer layer, a deep level trap may be formed to capture background electrons, and diffusion of free electrons toward the substrate may also be avoided. By decreasing a doping concentration of the transition metal in the second buffer layer, a tailing effect is avoided and current collapse is prevented. By doping periodically the impurity in the buffer layer, the impurity may be as an acceptor impurity to compensate the background electrons, and then a concentration of the background electrons is reduced. By using the periodic doping method, dislocations, caused by doping, in the buffer layer may be effectively reduced.

The present invention provides a semiconductor structure and a preparation method thereof. A transition metal and an impurity are co-doped on a buffer layer above a substrate layer to reduce the leakage current of a semiconductor device, to improve the pinch-off behavior, and to avoid the device current collapse, moreover, the ranges of the concentration of the transition metal and the impurity in the buffer layer are controlled to ensure the balance of the leakage current during the dynamic characteristics of the device.

Semiconductor structure and preparation method thereof

The present invention relates to a coaxial socket of an impedance matching structure for semiconductor chip testing and a manufacturing method thereof. The coaxial socket includes a test socket locating substrate, a test socket body, a test socket cover, and a test probe. A polymer I and a polymer II are installed and fastened in the test socket body and the test socket cover respectively. A probe slot I and a probe slot II are provided in the polymer I and the polymer II respectively. The test probe is inserted through the probe slot I and the probe slot II. In the present invention, the test socket body and the test socket cover are made of conductive metal, and single-end impedance matching of 50 ohms or differential impedance matching of 100 ohms is performed between them and the probe, to achieve superb signal transmission and heat conduction.

Coaxial socket of impedance matching structure for semiconductor chip testing and manufacturing method thereof

Growing community of inventors

Jiangsu, China

Kai Liu