Infineon Technologies Ag

Kai Huckels

Christoph Ludwig

Elard Stein Von Kamienski

Christoph Kutter

Peter Wawer

Georg Georgakos

Jakob Kriz

Olaf Heitzsch

Konrad Wolf

Reinhold Rennekamp

Andreas Liebelt

Oliver Springmann

Mayk R&ouml;hrich

Klaus Herlitz

A nonvolatile NOR semiconductor memory device and a method for programming the memory device are described. The memory device has a multiplicity of one-transistor memory cells disposed in a matrix form being driven both via word lines and via bit lines. In this case, each one-transistor memory cell has both a source line and a drain line, as a result of which selective driving of the respective drain and source regions is obtained. In this way, a leakage current in the semiconductor memory device can be optimally reduced with minimal space requirement.

Nonvolatile nor semiconductor memory device and method for programming the memory device

A method for producing a non-volatile semiconductor memory cell with a separate tunnel window cell includes the step of forming a tunnel zone in a late implantation step by performing a tunnel implantation with the aid of a tunnel window cell as a mask. The resulting memory cell has a small area requirement and a high number of program/clear cycles.

Method for fabricating a non-volatile semiconductor memory cell with a separate tunnel window

A backing film having areas of different compressibilities is useful in polishing semiconductor wafers.

Backing film for chemical mechanical planarization (CMP) of a semiconductor wafer

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Wolfsburg, Germany

Kai Huckels