Chinese Academy of Sciences

Honeywell International Inc.

Medtronic, Inc.

United Automotive Electronic Systems Co. Ltd.

Kai Huang

Xin Ou

Xi Wang

Marilyn Wang

Hailin Liu

Wesley Nie

Xingping Wang

Shibin Zhang

Qi Jia

Tiangui You

Jack Yu

Pengcheng Zheng

Zhongmin Liu

Jing Jing Zhang

Tao Zhang

Mao Ye

Xin Tang

Wei Hu

Xiaoqing Chen

Yong You

Shuanghe Meng

Yong Feng

Kevin Cai

Peng Cui

Ouyang Yang

Wenhui Xu

Qiang Guo

Yueqiang Xue

Jian Song

Hongyan Zhou

Chengli Wang

Qishuai Gao

Xibin Li

Jingjing Shen

Deji Li

Chengrui Pan

Jianming Zhou

Zhenhua Yuan

A pressure sensor () includes a pressure measuring device () including: a circuit board (); and a processing unit () and a detection unit, both provided on the circuit board (); the detection unit includes first, second and third MEMS sensing elements (); the first MEMS sensing element () is configured to sense a first pressure (P) at a first target position; the second MEMS sensing element () is configured to sense a second pressure (P) at a second target position, and the third MEMS sensing element () is configured to sense a pressure difference (ΔP) between the first and second target positions; the processing unit () is configured to determine whether the three MEMS sensing elements () are abnormal based on the first and second pressures and on the pressure difference; if it is determined that at least one of the three MEMS sensing elements is abnormal, the processing unit () outputs abnormal diagnostic information; if it is determined that none of the three MEMS sensing elements is abnormal, the processing unit () outputs information about the pressure(s) at the first and/or second target position(s) and the pressure difference; thus rationality diagnosis of the pressure signals is achieved, resulting in increased reliability and accuracy in pressure measurement.

Pressure sensor

The present invention provides a method for preparing a gallium oxide semiconductor structure and a gallium oxide semiconductor structure obtained thereby. The method comprises: providing a gallium oxide single-crystal wafer () having an implantation surface (a) (S); performing an ion implantation from the implantation surface (a) into the gallium oxide single-crystal wafer (), such that implanted ions reach a preset depth and an implantation defect layer () is formed at the preset depth (S); bonding the implantation surface (a) to a high thermal conductivity substrate () to obtain a first composite structure (S); performing an annealing treatment on the first composite structure such that the gallium oxide single-crystal wafer () in the first composite structure is peeled off along the implantation defect layer (), thereby obtaining a second composite structure and a third composite structure (S); and performing a surface treatment on the second composite structure to remove a first damaged layer (), so as to obtain a gallium oxide semiconductor structure comprising a first gallium oxide layer () and the high thermal conductivity substrate () (S). In the gallium oxide semiconductor structure formed using the above method, the first gallium oxide layer () is integrated with the high thermal conductivity substrate () to effectively improve the thermal conductivity of the first gallium oxide layer ().

Gallium oxide semiconductor structure and preparation method therefor

The present disclosure provides a high frequency surface acoustic wave resonator and a method for making the same. The high frequency surface acoustic wave resonator includes: a high wave velocity supporting substrate, a piezoelectric film disposed on a top surface of the high wave velocity supporting substrate, and a top electrode disposed on a top surface of the piezoelectric film; a velocity of a body wave propagating in the high wave velocity supporting substrate is greater than a velocity of a target elastic wave propagating in the piezoelectric film. The conductivity of the high wave velocity supporting substrate is greater than 1E3 &#x3a9;&#xb7;cm. The high frequency surface acoustic wave resonator and the method for making the same of the present disclosure solve the problem that the operating frequency of the traditional surface acoustic wave resonator is low.

High-frequency surface acoustic wave resonator and method for making the same

A skin surface indwelling device for guiding punctures includes: an indwelling tube () having an inside tunnel (P) substantially extending along the longitudinal direction of the indwelling tube (), the tunnel (P) is used for guiding needle (N), the indwelling tube () has a proximal end positioned above the skin surface (S) and a distal end positioned under the skin surface (S) in indwelling state; a support () having a bottom surface on its bottom that directly or indirectly contacts with the skin surface (S), the support () supports and fixates the indwelling tube (); and a sealing elements () configured to seal the tunnel (P). The skin surface indwelling device for guiding punctures can shorten the time of establishing a puncture tunnel in the buttonhole puncture method, and help to build the puncture tunnel. In addition, the skin surface indwelling device can also guide the puncture needle (N) when puncturing, and protect the immature puncture tunnel.

Skin surface indwelling device for guiding punctures

A method for preparing a film bulk acoustic wave device by using a film transfer technology includes: 1) providing an oxide monocrystal substrate; 2) implanting ions from the implantation surface into the oxide monocrystal substrate, and then forming a lower electrode on the implantation surface; or vice versa; and forming a defect layer at the preset depth; 3) providing a support substrate and bonding a structure obtained in step 2) with the support substrate; 4) removing part of the oxide monocrystal substrate along the defect layer so as to obtain an oxide monocrystal film, and transferring the obtained oxide monocrystal film and the lower electrode to the support substrate; 5) etching the support substrate from a bottom of the support substrate to form a cavity; 6) forming an upper electrode on the surface of the oxide monocrystal film.

Method for preparing film bulk acoustic wave device by using film transfer technology

A built-in electrode electrical capacitance tomography sensor, characterized in that the electrical capacitance tomography sensor is a barrel sensor, and sequentially comprises, from inside to outside, an array distribution electrode (), an electrode insulating sleeve (), a flange outer tube (), an insulating tube () and a signal transmission line. The array distribution electrode () includes N electrode sheets of the same size and consists of measurement ends and fixed ends, N being an integer of 8-16. The electrode is connected to an electrical capacitance tomography signal acquisition system () by means of a transmission line, and the acquired electrical capacitance data is sent to the electrical capacitance tomography signal acquisition system () by means of a signal transmission line, and is then sent to an imaging computer by means of the electrical capacitance tomography signal acquisition system () so as to complete image reconstruction.

Built-in electrode electrical capacitance tomography sensor

Gels that can react with air pollutants in air and methods for making said gels, are provided. The gels are useful for removing air borne pollutants from indoor environments.

Gels for removing air pollutants

A phase-transition type vanadium oxide material and a preparation method therefor. The preparation method includes the following steps: providing a vanadium oxide base material, and implanting gaseous ions into the vanadium oxide base material, to obtain a phase-transition type vanadium oxide material having a preset phase-transition temperature. Subsequently, optionally, further annealing may be performed to adjust a bubble generation status in vanadium oxide after the gaseous ions are implanted, to further adjust the stress and strain and the phase-transition temperature. The method for preparing a phase-transition type vanadium oxide material consistent with the present invention has simple steps, desirable process reproducibility, high flexibility, and the phase-transition temperature of vanadium oxide can be continuously adjusted by changing an implantation dosage of the gaseous ions. In addition, the present invention has desirable compatibility, and can be combined with other phase-transition temperature methods, to achieve a larger phase-transition temperature adjustment range.

Phase-change type vanadium oxide material and preparation method therefor

Compositions for removing air pollutants from the air are provided. These compositions can be sprayed on a variety of surfaces to remove air pollutants such as volatile organic compounds (VOCs) from the environment, and are suitable for use in human dwellings.

Compositions and methods for removing air pollutants

An apparatus for removing air pollutants from the air is described. The apparatus contains a fan module and a chamber that can hold either activated carbon or a gel that reacts with air pollutants from air.

Apparatus for efficient removal of air pollutants

A particulate matter (PM) sensor. The sensor comprises a mass separation fluid tunnel body defining a fluid inflow channel, a first fluid channel branch opening off of the inflow channel and having a first outlet, a second fluid channel branch opening off of the inflow channel and having a second outlet, and a fluid port between the first fluid channel branch and the second fluid channel branch, a fan located downstream of the first outlet and the second outlet, a photodetector located in the first fluid channel branch, and a computing device coupled to the photodetector having a processor and a memory storing instructions which, when executed by the processor, determines a mass concentration of particles in the first fluid channel branch based on an output of the photodetector.

Dust sensor with mass separation fluid channels and fan control

The invention discloses a debris-flow prevention method by controlling debris-flow magnitude and avoiding to block main river. This method first adopts the drainage works for delivering debris flow in corporation with the transport of the main river; if the drained sediment cannot be transported by the main river, the blocking works are adopted; and if the sediment still exceeds the delivering capacity, the deposit stopping works are adopted. Compared with the prior art, this invention makes full use of the main river's transport capacity, gives priority to dredging and also reasonably distributes the sediment and deploys the engineering system, so as to realize the safe discharge of debris flow, and avoid the secondary disaster of 'barrier lake' caused by the blocking of main river due to excessive discharge of debris flow and fully guarantee the safety of mountain towns, major projects and infrastructure located at the mouth of debris flow gully.

Debris-flow prevention method by controlling debris-flow magnitude and avoiding to block main river

Growing community of inventors

Shanghai, China

Kai Huang