Taiwan Semiconductor Manufacturing Comp. Ltd.

Mediatek Corporation

Kai-Chun Lin

Hung-Chang Yu

Yue-Der Chih

Ku-Feng Lin

Yu-Der Chih

Chun-Jung Lin

Chia-Fu Lee

Chin-Yi Huang

Chi-Hung Chen

Chih-Wen Yang

Ying-Hao Kuo

Yuan-Long Siao

Meng-Jye Hu

Laun C Tran

Chien-Wei Lin

Yung-Chang Chang

Chih-Ming Wang

Tien-Wei Chiang

Ya-Chen Kao

Chia-Yun Cheng

Hsiao-En Chen

Hsuan-Wen Peng

A prediction processing system includes a processing circuit and a reference data buffer. The processing circuit performs a first inter prediction operation upon a first prediction block in a frame to generate a first inter prediction result, and further performs a second inter prediction operation upon a second prediction block during a first period. The reference data buffer buffers a reference data derived from the first inter prediction result. The processing circuit further fetches the reference data from the reference data buffer, and performs a non-inter prediction operation according to at least the reference data during a second period, wherein the second period overlaps the first period.

Prediction processing system using reference data buffer to achieve parallel non-inter and inter prediction and associated prediction processing method

A video processing apparatus implemented in a chip includes an on-chip prediction buffer and a processing circuit. The on-chip prediction buffer is shared by a plurality of coding tools for prediction, and is used to store reference data. The processing circuit supports the coding tools for prediction, reads a plurality of first reference data from the on-chip prediction buffer as input data of a first coding tool that is included in the coding tools and enabled by the processing circuit, and writes output data of the first coding tool enabled by the processing circuit into the on-chip prediction buffer as a plurality of second reference data.

Video processing apparatus using internal prediction buffer that is shared by multiple coding tools for prediction

A post processing apparatus includes a super-resolution (SR) filtering circuit and a loop restoration (LR) filtering circuit. The SR filtering circuit applies SR filtering to a processing result of a preceding circuit. The LR filtering circuit applies LR filtering to a processing result of the SR filtering circuit. Before the SR filtering circuit finishes SR filtering of all pixels of a frame that are generated by the preceding circuit, the LR filtering circuit starts LR filtering of pixels that are derived from applying SR filtering to pixels included in the frame.

Post processing apparatus with super-resolution filter and loop restoration filter in block-level pipeline and associated post processing method

A method includes forming an insulator over a substrate. The insulator includes a first electrode, a second electrode, and a resistive element between the first electrode and the second electrode. The insulator is transformed into a resistor by applying a voltage to the insulator. The resistor is electrically connected to a transistor after transforming the insulator into the resistor.

Resistive memory array and fabricating method thereof

A memory device is provided which comprises a memory array, a first scrambling circuit and a second scrambling circuit. The first scrambling circuit is configured to provide first scrambled data with a first scrambling pattern in response to input data. The second scrambling circuit is configured to provide second scrambled data with a second scrambling pattern in response to the first scrambled data.

Scrambling apparatus and method thereof

A low-dropout (LDO) regulator is provided. The LDO regulator comprises a first circuit operating as a closed loop control system. The first circuit is configured to control a voltage at a first node such that the voltage at the first node is substantially equal to a specified regulator output voltage. The LDO regulator comprises a second circuit operating as an open loop control system. The second circuit is configured to increase the voltage at the first node when a current flowing through a load changes from a first current to a second current. The first current is substantially equal to 0 amperes.

Low-dropout regulator

A method of fabricating a resistive memory array includes forming a plurality of insulators and a conductive structure on a first substrate, performing a resistor-forming process to transform the insulators into a plurality of resistors, polishing the conductive structure to expose a plurality of contact points respectively electrically connected to the resistors, providing a second substrate having a plurality of transistors and a plurality of interconnect pads, bonding respectively the interconnect pads and the contact points, and removing the first substrate from the resistors and the conductive structure.

The present disclosure relates to a semiconductor integrated circuit. The semiconductor integrated circuit includes a substrate, a first transistor and a first patterned conductive layer. The first transistor has a source region, a drain region in the substrate and a gate region on the substrate. The first patterned conductive layer is electrically connected to the drain region of the first transistor. The first patterned conductive layer includes a first section, a second section and a fusible device.

Semiconductor integrated circuit

A embodiment package includes a three dimensional integrated circuit (3D IC) with first input/output pads on a first side and second input/output pads on a second side, a first fan out structure electrically coupled to the first input/output pads on the first side of the three dimensional integrated circuit, and a second fan out structure electrically coupled to the second input/output pads on the second side of the three dimensional integrated circuit.

Package with multiple plane I/O structure

Some embodiments relate to a system that includes write circuitry, read circuitry, and comparison circuitry. The write circuitry is configured to attempt to write an expected multi-bit word to a memory location in a memory device. The read circuitry is configured to read an actual multi-bit word from the memory location. The comparison circuitry is configured to compare the actual multi-bit word read from the memory location with the expected multi-bit word which was previously written to the memory location to distinguish between a number of erroneous bits in the actual multi-bit word and a number of correct bits in the actual multi-bit word. The write circuitry is further configured to re-write the number of erroneous bits to the memory location without attempting to re-write the number of correct bits to the memory location.

MRAM smart bit write algorithm with error correction parity bits

A semiconductor arrangement and a method of forming the same are described. A semiconductor arrangement includes a first layer including a first optical transceiver and a second layer including a second optical transceiver. A first serializer/deserializer (SerDes) is connected to the first optical transceiver and a second SerDes is connected to the second optical transceiver. The SerDes converts parallel data input into serial data output including a clock signal that the first transceiver transmits to the second transceiver. The semiconductor arrangement has a lower area penalty than traditional intra-layer communication arrangements that do not use optics for alignment, and mitigates alignment issues associated with conventional techniques.

Semiconductor arrangement and formation thereof

A stabilizing circuit is provided that is connected to a biased voltage. The stabilizing circuit is configured to inhibit a change in voltage of the biased voltage caused by a first change in voltage of one or more nodes that are connected to the biased voltage through a first parasitic capacitance. In some embodiments, the stabilizing circuit induces a voltage on the biased voltage through a second parasitic capacitance that changes from a first voltage level to a second voltage level during the first change in voltage such that a total change in parasitic voltage that is induced at the biased voltage during the first change in voltage is close to 0 V.

Stabilizing circuit

A trimming process for setting a reference current used in operating an MRAM module comprising an operational MRAM cell coupled to a bit line, multiple reference MRAM cells coupled to a reference bit line, and a sense amplifier coupled to the bit line and the reference bit line is disclosed in some embodiments. The process includes applying a bit line reference voltage to the reference bit line to provide a reference cell current formed by a sum of respective currents through the plurality of reference MRAM cells. The reference cell current is detected. A determination is made as to whether the detected reference cell current differs from a target reference cell current. The bit line reference voltage is varied, or a sensing ratio of the sense amplifier is varied, if it is determined that the detected reference cell current differs from the target reference cell current.

Growing community of inventors

Hsinchu, Taiwan

Kai-Chun Lin