Globalfoundries Singapore Pte. Ltd.

Infineon Technologies Ag

Kai Chong Chan

Gerald Ofner

Ranjan Rajoo

Charles Wee Ming Lee

Alfred Yeo

Michael Bauer

Juan Boon Tan

Ramasamy Chockalingam

Xiaodong Li

A semiconductor device is provided that includes a bond pad, an insulating layer, and a bonding structure. The bond pad is in a dielectric layer and the insulating layer is over the bond pad; the insulating layer having an opening over the bond pad formed therein. The bonding structure electrically couples the bond pad in the opening. The bonding structure has a height that at least extends to an upper surface of the insulating layer.

Bonding structures of semiconductor devices

A semiconductor wafer stack and a method of forming a semiconductor device is disclosed. The method includes providing a wafer stack with first and second wafers bonded together. The wafers include edge and non-edge regions, and at least one of the first and second wafers includes devices formed in the non-edge region. The first wafer serves as the base wafer while the second wafer serves as the top wafer of the wafer stack, where the base wafer is wider than the top wafer, providing a step edge of the wafer stack. An edge protection seal is formed on the wafer stack, where first and second layers are deposited on the wafer stack including at the top wafer and step edge of the wafer stack. The portion of the first and second layers on the step edge of the wafer stack forms the edge protection seal which protects the devices in the wafer stack in subsequent processing.

Wafer stack protection seal

Semiconductor devices and methods of forming a semiconductor device are disclosed. The device includes a wafer with top and bottom surfaces. The wafer includes edge and non-edge regions. The wafer includes a plurality of devices and partially processed TSV contacts disposed in the non-edge region and a groove disposed at the edge region. The groove enables edges of the wafer to be automatically trimmed off as the wafer is subject to a back-grinding planarization process to expose the TSV contacts in the non-edge region of the wafer.

Edge structure for backgrinding asymmetrical bonded wafer

A semiconductor wafer stack and a method of forming a semiconductor device is disclosed. The method includes providing first and second wafers with top and bottom surfaces. The wafers include edge and non-edge regions, and the first wafer includes devices formed in the non-edge region. A first protection seal may be formed at the edge region of the first wafer. The first and second wafers may further be bonded to form a device stack. The protection seal in the device stack contacts the first and second wafers to form a seal, and protects the devices in subsequent processing.

A semiconductor device () for radio frequency applications has a semiconductor chip () with an integrated circuit accommodated in a radio frequency package. Inside bumps () comprise inside contacts between the semiconductor chip () and a redistribution substrate (). The inside bumps () have a metallic or plastic core () and a coating layer () of a noble metal.

Semiconductor device for radio frequency applications and method for making the same

A method of manufacture of an integrated circuit packaging system includes: providing a semiconductor substrate; forming a core region on the semiconductor substrate with the core region having a core side; forming an inner bond pad on the semiconductor substrate with the inner bond pad having an inner core pad and an inner probe pad with the inner probe pad further from the core region than the inner core pad; and forming an outer bond pad on the semiconductor substrate and adjacent the inner bond pad with the outer bond pad having an outer core pad and an outer probe pad with the outer probe pad closer to the core region than the outer core pad, and the inner probe pad and the outer probe pad aligned parallel to the core side.

Integrated circuit packaging system with core region and bond pad and method of manufacture thereof

An improved crack stop structure (and method of forming) is provided within a die seal ring of an integrated circuit die to increase crack resistance during the dicing of a semiconductor wafer. The crack stop structure includes a stack layer (of alternating insulating and conductive layers) and an anchor system extending from the stack layer to a predetermined point below the surface of the substrate. A crack stop trench is formed in the substrate and filled with material having good crack resistance to anchor the stack layer to the substrate.

Fabricating method for crack stop structure enhancement of integrated circuit seal ring

A semiconductor package includes a rewiring substrate and a semiconductor chip. The semiconductor chip includes: a first face with an active surface including integrated circuit devices and chip contact pads, a second face lying in a plane essentially parallel to the first face and side faces. Each side face of the semiconductor chip lies in a plane essentially perpendicular to the first and second faces. At least one edge between two mutually essentially perpendicular faces of the semiconductor chip includes a surface.

Semiconductor package and method for producing the same

A method of manufacture of an integrated circuit packaging system includes: providing an integrated circuit substrate having a non-active side and an active side; forming a recess in the integrated circuit substrate from the non-active side exposing a first contact and a second contact with the first contact and the second contact along the active side; forming a first via, having a first via extension extended beyond the non-active side and an opening at the non-active side, within the recess; forming a barrier liner within the opening with the barrier liner exposed beyond the non-active side; and forming a second via over the barrier liner and within the opening of the first via with the second via exposed beyond the non-active side.

Integrated circuit packaging system and method of manufacture thereof

A panel and a semiconductor component including a composite board with semiconductor chips and plastic package molding compound and a method for the production thereof is disclosed. In one embodiment, the panel includes a composite board with semiconductor chips arranged in rows and columns in a corresponding plastic package molding compound with a plurality of semiconductor component positions. The thickness of the plastic package molding compound corresponds to the thickness of the semiconductor chips so that a coplanar upper side and a coplanar rear side are formed on the composite board. Located on the coplanar rear side of the composite board is a plastic layer whose coefficient of thermal expansion corresponds to the coefficient of thermal expansion of the composite board. Located on the coplanar upper side of the composite board is a wiring structure which has corresponding external contacts.

Panel and semiconductor component having a composite board with semiconductor chips and plastic package molding compound and method for the production thereof

A semiconductor component with a semiconductor chip and an adhesive film, and a method for its production is disclosed. In one embodiment, the semiconductor component has the adhesive film, which is internally prestressed and is adhesive on both faces, between the rear face of the semiconductor chip and a chip connecting surface on a circuit mount.

Semiconductor component with semiconductor chip and adhesive film, and method for its production

A semiconductor package comprises a substrate which includes a plurality of conducting traces and upper contact areas on its upper surface and a second plurality of lower conductive traces and external contact areas on its bottom surface and external conducting members attached to the external contact areas. The semiconductor package also includes a semiconductor die comprising an active surface with a plurality of die contact pads, electrically connected to the contact areas of the substrate by conducting members. A support layer between the conducting members on the active surface of the semiconductor die covers at least the base portion of the conducting members. A method relates to the production of the semiconductor package.

Growing community of inventors

Singapore, Singapore

Kai Chong Chan