Visera Technologies Company Limited

Kai-Chih Wang

Fang-Chang Liu

Tzu-Han Lin

Tzy-Ying Lin

A bonding pad structure for an optoelectronic device. The bonding pad structure includes a carrier substrate having a bonding pad region and an optoelectronic device region. An insulating layer is disposed on the carrier substrate, having an opening corresponding to the bonding pad region. A bonding pad is embedded in the insulating layer under the opening to expose the top surface thereof. A device substrate is disposed on the insulating layer corresponding to the optoelectronic device region. A cap layer covers the device substrate and the insulating layer excluding the opening. A conductive buffer layer is disposed in the opening to directly contact the bonding pad. The invention also discloses a method for fabricating the same.

Bonding pad structure for back illuminated optoelectronic device and fabricating method thereof

Isolation structure for CMOS image sensor device chip scale packages and fabrication methods thereof. A CMOS image sensor chip scale package includes a transparent substrate configured as a support structure for the package. The transparent substrate includes a first cutting edge and a second cutting edge. A CMOS image sensor die with a die circuitry is mounted on the transparent substrate. An encapsulant is disposed on the substrate encapsulating the CMOS image sensor die. A connection extends from the die circuitry to a plurality of terminal contacts for the package on the encapsulant, wherein the connection is exposed by the first cutting edge. An isolation structure is disposed on the first cutting edge passivating the exposed connection and co-planed with the second cutting edge.

Method of fabricating isolation structures for CMOS image sensor chip scale packages

A package structure for an optoelectronic device. The package structure comprises a device chip reversely disposed on a first substrate, which comprises a second substrate and a first dielectric layer between the first and second substrates. The first dielectric layer comprises a pad formed in a corner of the first dielectric layer non-overlapping the second substrate, such that the surface and sidewall of the pad are exposed. A metal layer is formed directly on the exposed surface of the pad and covers the second substrate. A protective layer covers the metal layer, having an opening to expose a portion of the metal layer on the second substrate. A solder ball is disposed in the opening, electrically connecting to the metal layer. The invention also discloses a method for fabricating the same.

Method for fabricating package structures for optoelectronic devices

A bonding pad structure for an optoelectronic device. The bonding pad structure comprises a carrier substrate having a bonding pad region and an optoelectronic device region. An insulating layer is disposed on the carrier substrate, having an opening corresponding to the bonding pad region. A bonding pad is embedded in the insulating layer under the opening to expose the top surface thereof. A device substrate is disposed on the insulating layer corresponding to the optoelectronic device region. A cap layer covers the device substrate and the insulating layer excluding the opening. A conductive buffer layer is disposed in the opening to directly contact the bonding pad. The invention also discloses a method for fabricating the same.

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Taoyuan, Taiwan

Kai-Chih Wang