Taiwan Semiconductor Manufacturing Comp. Ltd.

Kai-Chih Liang

Chia-Hua Chu

Chun-Wen Cheng

Chung-Hsien Lin

Jiou-Kang Lee

Te-Hao Lee

Chun-Ren Cheng

Alexander Kalnitsky

Yi-Shao Liu

Yi Heng Tsai

Kuei-Sung Chang

Hua-Shu Ivan Wu

Li-Cheng Chu

Chia-Pao Shu

Hsueh-An Yang

Nick Y M Shen

Chia-Shiung Tsai

Yuan-Chih Hsieh

Ming-Chyi Liu

Yi-Hsien Chang

Wen-Chuan Tai

Han-Chin Chiu

Allen Timothy Chang

Gwo-Yuh Shiau

Wei-Cheng Shen

Mingo Liu

Tzu-Heng Wu

Tsung-Mu Lai

Li-Chun Peng

Fa-Yuan Chang

Tsung-Cheng Huang

Ching-Chung Pai

Chin-Hsiang Ho

Chu-Wei Cheng

The present disclosure provides a bio-field effect transistor (BioFET) and a method of fabricating a BioFET device. The method includes forming a BioFET using one or more process steps compatible with or typical to a complementary metal-oxide-semiconductor (CMOS) process. The BioFET device may include a substrate; a gate structure disposed on a first surface of the substrate and an interface layer formed on the second surface of the substrate. The interface layer may allow for a receptor to be placed on the interface layer to detect the presence of a biomolecule or bio-entity.

CMOS compatible BioFET

A microelectromechanical system (MEMS) device may include a MEMS structure over a first substrate. The MEMS structure comprises a movable element. Depositing a first conductive material over the first substrate and etching trenches in a second substrate. Filling the trenches with a second conductive material and depositing a third conductive material over the second conductive material and the second substrate. Bonding the first substrate and the second substrate and thinning a backside of the second substrate which exposes the second conductive material in the trenches.

MEMS devices and methods of forming same

Exemplary microelectromechanical system (MEMS) devices, and methods for fabricating such are disclosed. An exemplary method includes providing a silicon-on-insulator (SOI) substrate, wherein the SOI substrate includes a first silicon layer separated from a second silicon layer by an insulator layer; processing the first silicon layer to form a first structure layer of a MEMS device; bonding the first structure layer to a substrate; and processing the second silicon layer to form a second structure layer of the MEMS device.

Dual layer microelectromechanical systems device and method of manufacturing same

The present disclosure relates to an integrated microsystem with a protection barrier structure, and an associated method. In some embodiments, the integrated microsystem comprises a first die having a plurality of CMOS devices disposed thereon, a second die having a plurality of MEMS devices disposed thereon and a vapor hydrofluoric acid (vHF) etch barrier structure disposed between the first die and the second die. The second die is bonded to the first die at a bond interface region. The vHF etch barrier structure comprises a vHF barrier layer over an upper surface of the first die, and a stress reduction layer arranged between the vHF etch barrier layer and the upper surface of the first die.

VHF etch barrier for semiconductor integrated microsystem

MEMS devices, packaged MEMS devices, and methods of manufacture thereof are disclosed. In one embodiment, a microelectromechanical system (MEMS) device includes a first MEMS functional structure and a second MEMS functional structure. An interior region of the second MEMS functional structure has a pressure that is different than a pressure of an interior region of the first MEMS functional structure.

MEMS devices, packaged MEMS devices, and methods of manufacture thereof

A sensor is made up of two substrates which are adhered together. A first substrate includes a pressure-sensitive micro-electrical-mechanical (MEMS) structure and a conductive contact structure that protrudes outwardly beyond a first face of the first substrate. A second substrate includes a complementary metal oxide semiconductor (CMOS) device and a receiving structure made up of sidewalls that meet a conductive surface which is recessed from a first face of the second substrate. A conductive bonding material physically adheres the conductive contact structure to the conductive surface and electrically couples the MEMS structure to the CMOS device.

CMOS-MEMS integrated flow for making a pressure sensitive transducer

A MEMS structure incorporating multiple joined substrates and a method for forming the MEMS structure are disclosed. An exemplary MEMS structure includes a first substrate having a bottom surface and a second substrate having a top surface substantially parallel to the bottom surface of the first substrate. The bottom surface of the first substrate is connected to the top surface of the second substrate by an anchor, such that the anchor does not extend through either the bottom surface of the first substrate or the top surface of the second substrate. The MEMS structure may include a bonding layer in contact with the bottom surface of the first substrate, and shaped to at least partially envelop the anchor.

MEMS structure with adaptable inter-substrate bond

Growing community of inventors

Zhubei, Taiwan

Kai-Chih Liang