Industrial Technology Research Institute

Matsushita Electric Works, Ltd.

Kai-Chi Chen

Shu-Chen Huang

Hsun-Tien Li

Chih-Hao Lin

Wen-Bin Chen

Yi-Chun Chen

Tzong-Ming Lee

Taro Fukui

Meei-Yu Hsu

Tomoaki Nemoto

Ying-Nan Chan

Ren-Yang Horng

Po-I Liu

Yueh-Chuan Huang

Chia-Hua Ho

Chia-Wen Hsu

David Chiuni Wang

Yeu-Ding Chen

Ya-Huei Ho

Mei-Ling Chen

An epoxy compound, composition and cured product thereof are provided. The epoxy compound has a structure represented by Formula (I)

Epoxy compound, composition and cured product thereof

A resin compound has a structure represented by a chemical formula (I): In the chemical formula (I), each Rindependently represents a C-Calkylene group or a C-Calkylarylene group, and Rare the same or different from each other; n independently represents an integer of 1-4; each Rindependently represents a C-Calkyl group or a C-Cterminal alkenyl group, and Rare the same or different from each other. When at least one of Rrepresents a C-Calkylene group, at least one of Ris a C-Cterminal alkenyl group.

Resin compound and resin composition containing the same

A curable composition and an electronic device employing the same are provided. The curable composition includes 100 parts by mole of a first siloxane compound represented by Formula (I) wherein n is 8 to 232, wherein Ris independently Calkyl group; 1 to 15 parts by mole of a second siloxane compound represented by Formula (II) wherein x&#x2265;2, y&#x2265;2, and x/y is between 0.1 and 3, and R, Rand Rare independently Calkyl group; 1 to 15 parts by mole of a third siloxane compound represented by Formula (III) and 90 to 250 parts by mole of a curing agent represented by Formula (IV) wherein m is 7 to 230, wherein Ris independently Calkyl group.

Curable composition and electronic device employing the same

A block copolymer is provided. The block copolymer includes a first block including repeat units represented by formula (I), and a second block connected to the first block and including repeat units represented by formula (II) or (III). The disclosure also provides a method for preparing the block copolymer and a thin film structure including the same.

Block copolymer, preparation method thereof, and thin film structure comprising the same

An extracted material for forward osmosis is provided. The extracted material includes a first ionic compound, a second ionic compound and a third ionic compound, which are represented by formula {K[A(R)(R)(R)]}(X)(Y). Xis the same as Yin the first ionic compound. Xis the same as Yin the second ionic compound. Xin the first ionic compound is different from Xin the second ionic compound. Xdiffers from Yin the third ionic compound. Xin the third ionic compound is the same as Xin the first ionic compound or Xin the second ionic compound. Yin the third ionic compound is the same as Yin the first ionic compound or Yin the second ionic compound. A method for preparing an extracted material and a forward-osmosis water desalination system using the same are also provided.

Extracted material for forward osmosis, preparation method thereof, and forward-osmosis water desalination system using the same

A packaging material is provided. The packaging material includes (a) epoxy silsesquioxane, (b) epoxy resin, and (c) siloxane-imide-containing benzoxazine compound. (a) Epoxy silsesquioxane and (b) epoxy resin have a weight ratio of 0.3:1 to 10:1. The total weight of (a) epoxy silsesquioxane and (b) epoxy resin and the weight of (c) siloxane-imide-containing benzoxazine compound have a ratio of 100:20 to 100:150.

Packaging material and film

A multi-branched cationic phosphonium salt is provided. The multi-branched cationic phosphonium salt has a structure represented by formula (I):{Z[P(R)(R)(R)]}(X)&#x2003;&#x2003;(I) 

Multi-branched cationic phosphonium salt, forward osmosis extract employing the same and forward osmosis seawater desalination process

An optical solid state prepolymer is provided, which includes a product formed by reacting 100 parts by weight of (a) epoxy resin and 0.1 to 30 parts by weight of (b) oligomeric silsesquioxane. The (a) epoxy resin includes (a1) linear siloxane epoxy resin and (a2) cyclic siloxane epoxy resin with a weight ratio of 1:1 to 5:1.

Optical solid state prepolymer and molding composition

An organic-inorganic hybrid resin, a molding composition, and a photoelectric device employing the same are disclosed. The organic-inorganic hybrid resin is a reaction product of a composition, wherein the composition includes: 0.1-10 parts by weight of reactant (a), and 100 parts by weight of reactant (b). In particular, the reactant (a) is a silsesquioxane prepolymer with metal oxide clusters, and the metal oxide cluster includes Ti, Zr, Zn, or a combination thereof. The reactant (b) includes an epoxy resin.

Organic-inorganic hybrid resin, molding composition, and photoelectric device employing the same

A siloxane resin and photoelectric device employing the same are provided. The siloxane resin composition includes (a) 45-87 parts by weight of a first siloxane compound represented by Formula (I), wherein each Ris independently Calkyl group, and n is an integer from 2 to 15;   

Siloxane resin composition, and photoelectric device employing the same

An encapsulant composition for a light-emitting diode is provided. One embodiment of the encapsulant composition comprises: (a) about 100 parts by weight of at least one liquid bi-functional epoxy resin containing about 40&#x2dc;50 weight % of aromatic ring; (b) about 55&#x2dc;120 parts by weight of a curing agent comprising at least one bi-functional thiol curing agent containing aromatic ring and at least one aliphatic tetra-functional thiol curing agent, wherein the curing agent contains about 10&#x2dc;50 weight % of aromatic ring and about 20&#x2dc;35 weight % of sulfur; and (c) about 0.05&#x2dc;0.5 parts by weight of a catalyst. The encapsulant composition having a high refractive index can be used for a solid state light emitting device to enhance light extraction efficiency.

Encapsulant composition for a light-emitting diode

A chip package structure and a process for fabricating the same is disclosed. The chip package structure mainly comprises a carrier, a chip and an encapsulating material layer. To fabricate the chip package, a carrier and a plurality of chips are provided. Each chip has at least an active surface with a plurality of bumps thereon. The chips and the carrier are electrically connected. An encapsulating material layer that fills the bonding gap between the chips and the carriers and covers the chips and carrier is formed. The encapsulating material layer between the chips and the carrier has a first thickness and the encapsulating material layer over the chips has a second thickness. The second thickness has a value between half to twice the first thickness.

Chip package structure and process for fabricating the same

A chip package structure is disclosed. The chip package structure essentially comprises a carrier, one or more chips, a heat sink and an encapsulating material layer. At least one of the chips is flip-chip bonded and electrically connected to the carrier or another chip. There is a flip-chip bonding gap between the chip and the carrier or other chips. A heat sink is positioned on the uppermost chip. The encapsulating material layer fills the flip-chip bonding gap as well as a gap between the uppermost chip and the heat sink. A part of the surface of the heat sink away from the upper-most chip is exposed. Furthermore, the encapsulating material layer is formed in a simultaneous molding process. For example, the chip is separated from the heat sink by a distance between 0.03&#x2dc;0.2 mm, and the encapsulating material has a thermal conductivity greater than 1.2 W/m.K.

Chip package structure

A chip package structure is disclosed. The chip package structure essentially comprises a carrier, one or more chips, a heat sink and an encapsulating material layer. At least one of the chips is bonded and electrically connected to the carrier or another chip using a flip-chip bonding technique. A flip-chip bonding gap is set up between the chip and he carrier or other chips. The heat sink is set up over the top chip. The heat sink has an area bigger than the chip. The encapsulating material layer fills up the flip-chip bonding gap and covers the carrier as well as the heat sink. The encapsulating material layer is formed in a simultaneous molding process and has a thermal conductivity more than 1.2 W/m.K. Furthermore, a plurality of standoff components may be selectively positioned on the heat sink.

Fine conductive particles are composed of metallic conductive powder, and an insulating organic capping layer on the grains of the powder. The metallic conductive powder have grains with a diameter ranging from 1 to 20 microns, and the capping layer has a thickness of 50-400 nm, which is able to flow by thermo-pressing. The insulating organic capping layer is prepared from a silane having a reactive functionality, a fluorine-containing silane and a compound or a resin having a functionality able to reactive with the reactive functionality.

Growing community of inventors

Tsautuen Jen, Taiwan

Kai-Chi Chen