International Business Machines Corporation

Kai Chen

Xin Ru Wang

Evgeni Petrovich Gousev

Michael John Hargrove

Kam-Leung Lee

Scott W Crowder

Hung Y Ng

Asit Kumar Ray

Liang-Kai Han

Disclosed is an Internet-based method that enables users to search and browse for information (such as price) about a plurality of items (such as books) available for sale on the Internet, compare prices for the items individually or considered as a package, and optimize the package price. In a preferred embodiment, the invention searches for the lowest price and second lowest price for the desired items from Internet Web sites and databases, records the data in two matrices, and employs algorithms that implement certain set operations, including Cartesian product and set union, to optimize the result for all items.

Web price optimizer of multiple-item package orders for e-commerce on the internet and method of use

A p-type MOSFET having very shallow p-junction extensions. The semiconductor device is produced on a substrate by creating a layer of implanted nitrogen ions extending from the substrate surface to a predetermined depth preferably less than about 800 &angst;. The gate electrode serves as a mask so that the nitrogen implantation does not filly extend under the gate electrode. Boron is also implanted to an extent and depth comparable to the nitrogen implantation thereby forming very shallow p-junction extensions that remain confined substantially within the nitrogen layer even after thermal treatment. There is thus produced a pMOSFET having very shallow p-junction extensions in a containment layer of nitrogen and boron in the semiconductor material.

Nitrogen co-implantation to form shallow junction-extensions of p-type metal oxide semiconductor field effect transistors

A method for forming a semiconductor device comprising forming a dielectric layer on an area of a silicon substrate; implanting nitrogen atoms into said dielectric layer; forming a conductive layer of polysilicon over said dielectric layer; annealing the dielectric layer to drive the nitrogen atoms to form a gate dielectric of a dielectric layer having silicon nitride layer interfaces of the dielectric layer and the silicon substrate and the polysilicon layers; and, forming a gate structure in said polysilicon layer and source/drain regions in said silicon substrate, said source/drain regions aligned with said gate structure.

Gate dielectric with self forming diffusion barrier

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Hopewell Junction, NY, United States of America

Kai Chen