The Furukawa Electric Co., Ltd.

Kageyama Takeo

Hitoshi Shimizu

Norihiro Iwai

Yoshihiko Ikenaga

Yasumasa Kawakita

Koji Hiraiwa

According to a method of manufacturing a vertical-cavity surface-emitting semiconductor laser element in accordance with the present invention, a process of wet etching is performed for a part that is oxidized in a layer of an AlGaAs () which configures a layer having an index of refraction as lower and in which a composition of aluminum is designed to be as higher comparing to the other pairs of layers in a DBR mirror at an upper side that are formed at an inner side of a mesa post (). And then a process of filling up again is performed with making use of a layer of polyimide (). Moreover, an etchant that includes such as a hydrofluoric acid or a buffered hydrofluoric acid or an aqueous ammonia or the like is made use in order to perform such the process of wet etching.

Method of manufacturing vertical-cavity surface emitting laser

A vertical cavity surface emitting laser element as described herein can suppress of any dislocation, when a distributed Bragg reflector (DBR) mirror is formed on the onto a substrate (). The vertical cavity surface emitting laser can be designed so that an average of strain in the DBR mirror () and a layer thickness of the DBR mirror () are in reference to a curvature of the substrate () in order to satisfy a predetermined condition, and then nitrogen can be added into the DBR mirror () with a composition that corresponds to a designed average of strain in the DBR mirror (). For example, the average composition of nitrogen can be designed to be between 0.028% and 0.390%.

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Tokyo, Japan

Kageyama Takeo