Samsung Electronics Co., Ltd.

Hynix Semiconductor Inc.

Industry-university Cooperation Foundation Hanyang University

Samsung Display Co., Ltd.

Intellectual Discovery Co., Ltd.

Hana Micron Inc.

Hanyang Hak Won Co., Ltd.

Kae-Dal Kwack

Tae-Whan Kim

Hong-Jae Shin

Jae-Jin Lee

Sang-Su Park

Chun-Seok Jeong

Yong-Jin Choi

Jong-Man Im

Jung-Young Son

Sang-hoon Shin

Saveliev Vladmir

Han-Sub Yoon

Jong-Suk Lee

Joong-Sik Kih

Jae-Woong Choi

Myoung-Jun Chai

Dong-Hwan Kim

Si-Nae Kim

A display device, which includes a plurality of pixels; a data driver for outputting data signals to the pixels; a bias current outputting unit for outputting a bias current having a predetermined magnitude; a plurality of driving current outputting units for outputting driving currents to the pixels; and a first switch connected between the bias current outputting unit and the driving current outputting units for selecting one of the driving current outputting units to connect to the bias current outputting unit, wherein the magnitudes of the driving currents are substantially the same as a magnitude of the bias current.

Driving current output apparatus, method of manufacturing the same, display device and driving apparatus thereof

A flash memory using hot carrier injection and a method of operating the same are provided. A plurality of strings constituting a page are formed on a single p-well and share the p-well. During a program operation, a string selection transistor is turned off, and electrons are accumulated in a source or drain region in response to a bias voltage applied to the p-well. Thereafter, the accumulated electrons are trapped in a charge trap layer of a memory cell in response to a program voltage applied through a word line. Also, during an erase operation, holes accumulated in response to a bias voltage applied to the p-well are trapped in the charge trap layer in response to an erase voltage. The flash memory performs NAND-type program and erase operations using hot carrier injection.

NAND flash memory of using common P-well and method of operating the same

A non-volatile memory device includes a semiconductor substrate, first and second control gates, and first and second charge storage patterns. The semiconductor substrate includes a protruding active pin having a source region, a drain region and a channel region located between the source and drain regions. The first control gate is located on a first sidewall of the channel region, and the second control gate is located on a second sidewall of the channel region. The second control gate is separated from the first control gate. The first charge storage pattern is located between the first sidewall and the first control gate, and the second charge storage pattern is located between the second sidewall and the second control gate.

Non-volatile memory device and method of operating the same

An on-die thermal sensor includes an integrating analog-digital converter not requiring a negative reference voltage input. The on die thermal sensor includes a band gap unit, an integrating unit and a counting unit. The band gap unit senses a temperature to output a first voltage corresponding to the sensed temperature. The integrating unit integrates a difference between a reference voltage and a comparing voltage to output a second voltage wherein the comparing voltage has a voltage level higher than that of the reference voltage. The counting unit counts clocks of a clock signal input thereto until the second voltage reaches the first voltage, thereby outputting a thermal code corresponding to the voltage level of the first voltage.

Analog-digital converter and on-die thermal sensor including the same

A non-volatile memory device includes a semiconductor substrate, first and second control gates, and first and second charge storage patterns. The semiconductor substrate includes a protruding active pin having a source region, a drain region and a channel region located between the source and drain regions. The first control gate is located on a first sidewall of the channel region, and the second control gate is located on a second sidewall of the channel region. The second second control gate is separated from the first control gate. The first charge storage pattern is located between the first sidewall and the first control gate, and the second charge storage pattern is located between the second sidewall and the second control gate.

A charge pump for a DC-DC converter includes an input terminal receiving an input voltage, an output terminal outputting an output voltage, a plurality of charge pumping stages connected in series between the input terminal and the output terminal, and a voltage level shifter shifting voltage levels of first and second gate clock signals so that received first and second gate clock signals have a predetermined amplitude. Therefore, the charge pump can increase power efficiency by maximizing a magnitude of V. A DC-DC converter using the charge pump can also be applied to a portable device, for minimizing power consumption, and a method for improving power efficiency of the DC-DC converter is provided.

Charge pump, DC-DC converter, and method thereof

A clock driver is provided. A first driving unit is configured with a plurality of drivers and receives a first clock signal to drive a first pumping clock. A second driving unit is configured with a plurality of drivers and receives a second clock signal to drive a second pumping clock. A charge recycling switch is connected between an output terminal of the first driving unit and an output terminal of the second driving unit. A switch controller selectively transfers an input clock signal of the first or second driving unit to the charge recycling switch in response to the first and second pumping clock signals.

Clock driver

A method of forming pixel cell for three-dimensional image display is provided. The method of forming pixel cell according to this invention relates to a method of forming pixel-cell in a three-dimensional image display system including an image display panel in which a plurality of unit patterns are arranged in a vertical direction and horizontal direction and an optical plate having repetitive pattern. The method according to this invention comprising regarding each side of rhombus pattern having an arbitrary vertex angle as a straight line having a predetermined slant; calculating a number of unit pattern in vertical direction and a number of unit pattern in horizontal direction, corresponding to said predetermined slant; approximating said predetermined slant to stepped patterns with said number of unit pattern in vertical direction and said number of unit pattern in horizontal direction; and forming said pixel cell using said stepped patterns. And integer-numbered unit patterns are arranged in said pixel cell. By the present invention, quality degradation of a three-dimensional image due to Moire patterns is reduced.

Method of forming pixel cell for three-dimensional image display

There are provided an organic light emitting diode (OLED) display driving apparatus and a driving method thereof, in which the OLED display panel driving apparatus of a passive matrix type is configured such that its scan driving circuit has 3-state output, and the cathode lines, selected when the scan driving circuit performs a scan operation, maintain grounding, and after data-applied OLED emits light, are switched in a high voltage, and execute a refresh operation to initialize the pixel charges, and with the high impedance state maintained, non-selective common cathode lines turn into a high impedance state so as to remove the parasitic capacitance elements, and reduce the capacitance element functioning as the load of the data driving circuit connected to the OLED anode lines, and without the use of precharge method of maintaining the anode lines above a predetermined voltage quickly by using a voltage source, and applying data by using a current source, the anode lines can be charged within a short time just by necessary current for the lightening of the OLED so as to reduce the power consumption of the data driving circuit, and increase the operation speed.

Growing community of inventors

Seoul, South Korea

Kae-Dal Kwack