Spin Memory, Inc.

Integrated Silicon Solution, (Cayman) Inc.

Spin Transfer Technologies, Inc.

Kadriye Deniz Bozdag

Marcin Gajek

Michail Tzoufras

Eric Ryan

Mourad El Baraji

Kuk-Hwan Kim

Dafna Beery

Satoru Araki

Andrew J Walker

Mustafa Pinarbasi

Andy Walker

Benjamin S Louie

Neal Berger

Amitay Levi

Bartlomiej Adam Kardasz

Gian Sharma

Georg Wolf

Girish Jagtiani

Steven Watts

Aspects of the present technology are directed toward Integrated Circuits (IC) including a plurality of trenches disposed in a substrate about a set of silicide regions. The trenches can extend down into the substrate below the set of silicide regions. The silicide regions can be formed by implanting metal ions into portions of a substrate exposed by a mask layer with narrow pitch openings. The trenches can be formed by selectively etching the substrate utilizing the set of silicide regions as a trench mask. An semiconductor material with various degree of crystallinity can be grown from the silicide regions, in openings that extend through subsequently formed layers down to the silicide regions.

Patterned silicide structures and methods of manufacture

A magnetic memory pillar structure having a plurality of magnetic memory elements connected in series, wherein switching of individual memory elements in the pillar structure can be accomplished based on differing switching current values of the magnetic memory elements. Each of the plurality of memory elements advantageously have similar retention values in spite of the different switching current values (latency values) as a result of a precessional spin current injection structure provided in the memory element or memory elements having the lower switching current value.

High retention multi-level-series magnetic random-access memory

A method of writing data into a memory device is disclosed. The method comprises utilizing a pipeline to process write operations of a first plurality of data words addressed to a memory bank and writing a second plurality of data words and associated memory addresses into an error buffer. The method also comprises monitoring a first counter value which tracks a number of write 1 errors and a second counter value which tracks a number of write 0 errors in the memory bank. Further, the method comprises determining if the first counter value and the second counter value have exceeded a predetermined threshold. Responsive to a determination that the first counter value has exceeded the predetermined threshold increasing a write 1 voltage of the memory bank, and, further, responsive to a determination that the second counter value has exceeded the predetermined threshold increasing a write 0 voltage of the memory bank.

Bi-polar write scheme

A method for manufacturing an array of magnetic memory elements, wherein first memory element types are formed in a first region and second type of magnetic memory element types are formed in a second region. A shadow-mask is used during deposition to limit the deposition of at least one layer of memory element material to only the second region wherein the second memory element types are to be formed. The method can include depositing full film magnetic memory element layers over an entire substrate and then using the shadow-mask to deposit at least one performance altering material in the second memory element region. Alternatively, a first shadow-mask can be used to deposit a series of first memory element layers in a first region, and a second shadow-mask can be used to deposit a plurality of second memory element layers in a second region.

Method for manufacturing a data recording system utilizing heterogeneous magnetic tunnel junction types in a single chip

An apparatus includes two or more magnetic tunnel junctions (MTJs), including a first MTJ having a first magnetic characteristic and a second MTJ having a second magnetic characteristic. The first magnetic characteristic is distinct from the second magnetic characteristic. The first magnetic characteristic is based on a first magnetic anisotropy and a first offset field on a first storage layer of the first MTJ. The second magnetic characteristic is based on a second magnetic anisotropy and a second offset field on a second storage layer of the second MTJ, The apparatus further includes a metallic separator coupling the first MTJ with the second MTJ, wherein the first MTJ and the second MTJ are arranged in series.

Systems and methods utilizing serial and parallel configurations of magnetic memory devices

A method for crystalized silicon structures from amorphous structures in a magnetic memory array, wherein the temperature needed to crystalize the amorphous silicon is lower than the temperature budget of the memory element so as to avoid damage to the memory element. An amorphous silicon is deposited, followed by a layer of Ti or Co. An annealing process is then performed which causes the Ti or Co to form TiSior CoSiand also causes the underlying amorphous silicon to crystallize.

High density MRAM integration

A magnetic memory device that includes magnetic read elements and magnetic reference cells. The magnetic reference cells include magnetic tunnel junction elements having the same construction as the magnetic read elements. The reference cells produce a reference signal that can be compared with a read signal from the magnetic read element to determine whether the read element is in a high or low resistance state. During creation of the reference signal, the current passes in such a way so that reference cells are forced to be in the right state while causing no disturbance to the reference cell. The reference cell includes magnetic tunnel junction elements and also includes circuitry configured to produce a magnetic field that biases the magnetic tunnel junction elements of the reference cell into a desired magnetic state to ensure that the desired magnetic state of the reference cell magnetic tunnel junction elements is maintained.

MRAM array having reference cell structure and circuitry that reinforces reference states by induced magnetic field

A magnetic data recording system utilizing different magnetic memory element types to optimize competing performance parameters in a common memory chip. The memory system includes a first memory portion which can be a main memory and which includes magnetic memory elements of a first type, and a second memory region which can be a temporary memory region and which includes magnetic memory elements of a second type. A memory controller can be provided for controlling the input and retrieval of data to and from the first and second memory elements. The second, memory region can be a scratchpad memory or could also be cache type memory. The first type of magnetic memory elements can be designed for high data retention, whereas the second type of magnetic memory elements can be designed for fast write speed (low latency) and low write power consumption.

Memory system utilizing heterogeneous magnetic tunnel junction types in a single chip

A method for selectively writing to STT-MRAM using an AC current is provided. The method is performed in a memory device including two or more multilevel magnetic tunnel junctions (MTJs) arranged in series with respect to a single terminal of a transistor, where the two or more multilevel MTJs include a first MTJ having a first magnetic characteristic and first electrical characteristic and a second MTJ having a second magnetic characteristic that is distinct from the first magnetic characteristic and a second electrical characteristic. The method includes writing to an MTJ. The writing includes applying a DC current to the two or more MTJs and applying an AC current to the two or more MTJs, where the AC current is adjusted to a frequency that is tuned to a write assist frequency corresponding to the respective MTJ.

Methods and systems for writing to magnetic memory devices utilizing alternating current

Techniques for reading a Multi-Bit Cell (MBC) can include sensing a state parameter value, such as source line voltage, and applying a successive one of N programming parameter values, such as successive programming currents, between instances of sensing the state parameter values. The N successive programming parameter values can be selected to switch the state of a corresponding one of N cell elements of the MBC. Successive ones of the sensed state parameter values can be compared to determine N state change results, which can be used to determine the read state of the MBC.

Read-out techniques for multi-bit cells

A method for forming three-dimensional magnetic memory arrays by forming crystalized silicon structures from amorphous structures in the magnetic memory array, wherein the temperature needed to crystalize the amorphous silicon is lower than the temperature budget of the memory element so as to avoid damage to the memory element. An amorphous silicon is deposited, followed by a layer of Ti or Co. An annealing process is then performed which causes the Ti or Co to form TiSior CoSiand also causes the underlying amorphous silicon to crystallize.

Multi-bit cell read-out techniques for MRAM cells with mixed pinned magnetization orientations

A magnetoresistive random-access memory (MRAM) is disclosed. The MRAM bit cell consists of a magnetic tunnel junction stack having a significantly improved performance of the magnetic storage layer. The MRAM device utilizes a polarizer layer with a magnetic vector that can switch between a stabilizing magnetic direction and a programming magnetic direction.

Adjustable stabilizer/polarizer method for MRAM with enhanced stability and efficient switching

Techniques for reading a Multi-Bit Cell (MBC) can include sensing a state parameter value, such as source line voltage, and applying a successive one of N programming parameter values, such as successive programming currents, between instances of sensing the state parameter values. The N successive programming parameter values can be selected to program the state of a corresponding one of N cell elements of the MBC to a respective state parameter value. Successive ones of the sensed state parameter values can be compared to determine N state change results, which can be used to determine the read state of the MBC.

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Kadriye Deniz Bozdag