Yonsei University

Ka Young Lee

Kyung Ho Kim

Gun Hee Kim

Hyun Jae Kim

Hyun Soo Shin

Won Jun Park

Yun Jung Choi

Tae Hoon Jeong

Sang Wook Lee

Taeyoon Lee

Ja Hoon Koo

A method of fabricating a liquid for an oxide thin film is provided, which includes mixing at least two kinds of dispersoids selected from the group consisting of a Zinc compound, an Indium compound, a Gallium compound, a Tin compound and a Thallium compound, with dispersion media corresponding to the selected dispersoids to form a dispersion system, and stirring and aging the dispersion system at a predetermined temperature for a predetermined time, wherein a molar ratio of the Zinc compound to each of the Indium compound, Gallium compound, Tin compound and Thallium compound is 1:0.1 to 1:2. According to the present invention, the liquid for the oxide thin film may be fabricated by a sol-gel method making it capable of being implemented in mass production in a simple and low-cost manner as opposed to the conventional vacuum deposition method.

Method of fabricating liquid for oxide thin film

A method for forming a silicon layer according to inventive concept comprises: preparing an SOI substrate; applying an etchant or vapor of the etchant to the SOI substrate; and irradiating a light to the SOI substrate.

Method for forming a silicon layer on any substrate using light irradiation

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Seoul, South Korea

Ka Young Lee