Novellus Systems Incorporated

Ka Shun Wong

Bart Jan Van Schravendijk

Haiying Fu

Jengyi Yu

Somnath S Nag

Xingyuan Tang

Atul Gupta

Sanjeev Jain

Judy Hsiu-Chih Huang

Hermetic amorphous doped silicon carbide is deposited on an integrated circuit substrate in a PECVD reactor. Nitrogen-doping of an SiC film is conducted by flowing nitrogen-containing molecules, preferably nitrogen or ammonia gas, into the reactor chamber together with an organosilane, preferably tetramethylsilane, and forming a plasma. Oxygen-doping is conducted by flowing oxygen-containing molecules into the reaction chamber.

Hermetic silicon carbide

Two sequential treatments within a chemical vapor deposition chamber, or within sequential chambers without a vacuum break, are performed on a copper layer to clean and passivate the copper surface prior to deposition of a copper diffusion barrier layer or a dielectric layer. The first treatment includes an ammonia, a hydrogen, or a hydrocarbon plasma cleaning of the copper surface followed by a short initiation of an organosilane precursor or a thin silicon nitride layer. A copper diffusion barrier layer may then be formed over the pretreated copper surface using an organosilane plasma, with or without a carbon dioxide or a carbon monoxide, or a silane with a nitrogen gas and an ammonia gas. Copper diffusion is retarded and film adhesion is improved for a dielectric layer or a copper diffusion barrier layer on the copper surface.

Systems and methods to retard copper diffusion and improve film adhesion for a dielectric barrier on copper

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San Jose, CA, United States of America

Ka Shun Wong