Vlsi Technology, Inc.

K S Ravindhran

Walter D Parmantie

Yu P Han

Ravi Jhota

After gates are patterned in a submicron CMOS process, a halo implant is performed with sufficient energy that the halo implant penetrates the gate structures to below the transistor channel regions. Where the substrate is not masked by gate materal, the halo implant penetrates below drain and source regions. During diffusion, this halo limits lateral diffusion of the source/drain dopants. The resulting transistor exhibits enhanced breakdown voltage characteristics during both on and off conditions.

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San Antonio, TX, United States of America

K S Ravindhran