Infineon Technologies Ag

Jürgen Auge

Manfred Pröll

Stephan Schröder

Ralf Schneider

Jörg Kliewer

Thomas Huber

Frank Schroeppel

An integrated semiconductor memory includes a memory cell array with at least one memory cell, in which a data value is stored, and an evaluation circuit with a counter. During a test of the integrated semiconductor memory, a counter reading of the counter is altered if the data value stored in the memory cell deviates from a desired value. A threshold value is predefined by a control circuit. A programming circuit compares the threshold value on the input side with the instantaneous counter reading of the counter. If the counter reading of the counter exceeds the threshold value, a programming element changes from a first programming state to a second programming state. After the conclusion of the test, the state of the programming element is read out via an output terminal. This scheme makes it possible to deduce a possible cause of failure of the integrated semiconductor memory.

Integrated semiconductor memory

In an arrangement for determining a temperature loading during a soldering process, a semiconductor chip () comprises at least one contact () to be soldered or is electrically conductively connected to at least one contact () to be soldered that is situated outside the semiconductor chip. The semiconductor chip () furthermore comprises a temperature sensor device (), which determines a measurement quantity corresponding to the temperature. A processing device () has an analog-to-digital converter (), which is electrically conductively connected to the temperature sensor device () and converts the measurement quantity into at least one storable signal that represents the temperature loading. A voltage supply device (), which is electrically conductively connected to the temperature sensor device () and the processing device (), supplies these components with an operating voltage. A data memory () serves for storing the at least one storable signal. An electrical line () connected to the data memory () serves for outputting the stored signal. As a result, it is possible to monitor temperature loadings of the semiconductor chip also outside the sphere of influence of the semiconductor manufacturer.

Arrangement for determining a temperature loading of an integrated circuit and method

An integrated circuit includes a programming circuit () for generating programming signals (PS, . . . , PS) with a first input terminal (E) for applying a control voltage (ES), a second input terminal (E) for applying a reference voltage (Vref), a storage circuit () with programmable switches () and output terminals (A, . . . , A). The programming circuit in each case generates a programming signal (PS, . . . , PS) when the control voltage (ES) exceeds a predefined threshold voltage formed from the reference voltage. The number of programming signals (PS, . . . , PS) is dependent on the magnitude of the threshold voltage exceeded by the control voltage (ES). The programming signals are used for programming the programmable switches (). The programming state of the programmable switches can be read out via the output terminals (A, . . . , A) of the integrated circuit. The integrated circuit enables the storage of external operating parameters of the integrated circuit.

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Unterhaching, Germany

Jürgen Auge