Semikron Elektronik Gmbh &co.kg

Jörn Groβmann

Ingo Bogen

Christian Göbl

Christian Walter

Patrick Graschl

A power semiconductor module, and method for its manufacture, comprising a first housing part having a cutout and a DC voltage load connection apparatus forming a structural unit, wherein the DC voltage load connection apparatus has first and second DC voltage load connection elements. The first DC voltage load connection element has a first leadthrough section arranged in the cutout, and the second DC voltage load connection element has a second leadthrough section arranged in the cutout forming a gap therebetween. The first and second leadthrough sections are sheathed by an elastomer, which fills the gap, is cohesively connected to the first and second leadthrough sections and seals off the first and second leadthrough sections with respect to the first housing part. The inventive power semiconductor module exhibits a high resistance to thermal cycling, and the distance between the DC voltage load connection elements can be configured to be small.

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Nürnberg, Germany

Jörn Groβmann