Hitachi, Ltd.

Jörg Wunderlich

Kenchi Ito

David Arfon Williams

Tomas Jungwirth

Bryan Gallagher

Andrew Irvine

David Williams

A single-electron transistor () has an elongate conductive channel () and a side gate () formed in a 5 nm-thick layer () of GaMnAs. The single-electron transistor () is operable, in a first mode, as a transistor and, in a second mode, as non-volatile memory.

Single-charge tunnelling device

A conduction control device comprises a first ferromagnetic region having relatively high coercivity, a second ferromagnetic region having relatively low coercivity and a junction region disposed between the first and second ferromagnetic regions. The device also comprises a gate for applying a field to the junction region so as to control charge carrier density within the junction region.

Conduction control device

Growing community of inventors

Cambridge, United Kingdom

Jörg Wunderlich