Infineon Technologies Ag

Jörg Thiele

Rainer Pforr

Mario Hennig

Wolfgang Dettmann

Roderick Köhle

Molela Moukara

Burkhard Ludwig

Nicolo Morgana

Markus Hofsäss

Marco Ahrens

Karsten Zeiler

A set of at least two masks, coordinated with one another, for the projection of structure patterns, into the same photosensitive layer arranged on a semiconductor wafer. The first mask includes a semitransparent or nontransparent first layer, which is arranged on a first substrate and in which at least one first opening is formed at a first position, the first opening having a first lateral dimension, which is greater than the resolution limit of a projection system for the projection of the structure patterns. The second mask includes a semitransparent or nontransparent second layer, which is arranged on a second substrate and in which at least one dummy structure assigned to the first opening is formed at a second position, the dummy structure having a second lateral dimension, which is smaller than the resolution limit of the projection system wherein the first position on the first mask corresponds to the second position on the second mask.

Set of at least two masks for the projection of structure patterns

A set of at least two masks for the projection of structure patterns coordinated with one another by a projection system into the same photosensitive layer of a semiconductor wafer, in which the set of at least two masks includes a primary mask having an opaque structure element, which is formed at a first position on the first mask. A second mask of the set, for example a trimming mask, which is assigned to the first mask, can have a semitransparent region assigned to the structure element of the first mask. The semitransparent region can be formed at the same position on the second mask as the opaque structure element on the first mask. With the aid of the suitable choice of the transparency of the semitransparent region, it is possible to enable an undesirable resist region to be trimmed away for enlargement of a process window during exposure of the photosensitive layer on the semiconductor wafer.

Set of masks including a first mask and a second trimming mask with a semitransparent region having a transparency between 20% and 80% to control diffraction effects and obtain maximum depth of focus for the projection of structure patterns onto a semiconductor wafer

A lithography mask has an angled structure element (O) formed by a first opaque segment (O) and by a second opaque segment (O). The structure element has at least one reflex angle (&#x3b1;). The angled structure element (O) includes at least one convex section (A) facing the reflex angle (&#x3b1;). At least one transparent structure (T) adjacent to the angled structure element (O) is provided at the convex section (A) of the angled structure element (O). The transparent structure (T) is formed in separated fashion at the convex section (A) of the angled structure element (O) and thus comprises two distinguishable transparent segments (T, T) formed at least in sections essentially axially symmetrically with respect to the angle bisector (WH) of the reflex angle.

Lithography mask for imaging of convex structures

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Munich, Germany

Jörg Thiele