Mattson Technology, Inc

Jörg Schulze

Ignaz Eisele

Zsolt Nenyei

Georg Roters

Alexandra Ludsteck

Waltraud Dietl

A process for forming and/or modifying dielectric films on semiconductor substrates is disclosed. According to the present invention, a semiconductor wafer is exposed to a process gas containing a reactive component. The temperature to which the semiconductor wafer is heated and the partial pressure of the reactive component are selected so that, sometime during the process, diffusion of the reactive components occurs through the dielectric film to the film/semiconductor substrate interface. Further, diffusion also occurs of semiconductor atoms through the dielectric film to an exterior surface of the film. The process of the present invention has been found well suited to forming and/or modifying very thin dielectric films, such as films having a thickness of less than 8 nm.

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Erding, Germany

Jörg Schulze