Infineon Technologies Ag

Ims Nanofabrication Ag

Institut Fur Mikroelektronik

Universitãt Stuttgart

Institut Fur Mikroelektronik Stuttgart

Jörg Butschke

Reinhard Springer

Florian Letzkus

Elmar Platzgummer

Albrecht Ehrmann

Hans Löschner

Manfred Berroth

Karl Kragler

Samuel Kvasnica

Mathias Irmscher

Christian Reuter

Wissem Sfar Zaoui

The invention relates to a multi-beam deflector array device for use in a particle-beam exposure apparatus employing a beam of charged particles, the multi-beam deflector array device having a plate-like shape with a membrane region, the membrane region including a first side facing towards the incoming beam of particles, an array of apertures, each aperture allowing passage of a corresponding beamlet formed out of the beam of particles, a plurality of depressions, each depression being associated with at least one aperture, and an array of electrodes, each aperture being associated with at least one electrode and each electrode being located in a depression, the electrodes being configured to realize a non-deflecting state, wherein the particles that pass through the apertures are allowed to travel along a desired path, and a deflecting state, wherein the particles are deflected off the desired path.

Multi-beam deflector array device for maskless particle-beam processing

Based upon an existing or to be produced multi-layered semiconductor-insulator-semiconductor carrier layer wafer (SOI substrate), irregularity of the etching conditions between the center and the edge region occurring during dry etching can be counteracted by a number of alternative steps, in particular, an additional layer construction compensating for the etching irregularity so that in any event an approximately homogeneous etching removal takes place over the entire area of the wafer to be etched.

Method of producing large-area membrane masks by dry etching

Growing community of inventors

Stuttgart, Germany

Jörg Butschke