Centre National De La Recherche Scientifique

Commissariat &#xc0; L'&#xc9;nergie Atomique Et Aux &#xc9;nergies Alternatives

Commissariat a L'energie Atomique

Jérôme Moritz

Bernard Dieny

Ricardo Sousa

Bernard Rodmacq

Stéphane Auffret

A magnetic device includes a magnetic layer having a variable direction of magnetization, and a first antiferromagnetic layer in contact with the magnetic layer, the first antiferromagnetic layer being able to trap the direction of magnetization of the magnetic layer. The magnetic device also includes a layer made of a ferromagnetic material in contact with the first antiferromagnetic layer through its face opposite to the magnetic layer, the directions of magnetization of the magnetic and ferromagnetic layers being substantially perpendicular. A first layer among the magnetic and ferromagnetic layers has a magnetization, the direction of which is oriented in the plane of the first layer whereas the second of the two layers among the magnetic and ferromagnetic layers has a magnetization, the direction of which is oriented outside of the plane of the second layer.

Magnetic device with exchange bias

The present invention relates to a magnetic recording medium (). The invention finds a particularly interesting application in the field of data stored on hard disks. The medium () comprises an assembly of magnetic zones disposed on a substrate (), each magnetic zone comprising at least one first (C') and one second (C&#x2032;) stacked magnetic layers separated from each other by a non-magnetic layer (NM&#x2032;). In addition, said first magnetic layer (C&#x2032;) presents magnetization substantially oriented parallel to the plane of said substrate () and said second magnetic layer (C&#x2032;) presents magnetization substantially oriented perpendicular to the plane of said substrate ().

Magnetic recording medium

This magnetic multilayer device comprises, on a substrate, an alternating sequence of magnetic metallic layers M and oxide, hydride or nitride layers O. The number of layers M equals at least two. The layers M are continuous. There is interfacial magnetic anisotropy perpendicular to the plane of the layers at the level of the M/O interfaces.

Growing community of inventors

Saint Pierre de Bressieux, France

Jérôme Moritz