Applied Materials, Inc.

Jérémy Gilbert Maurice Pereira

Olivier Joubert

Benjamin Schwarz

Maxime Darnon

Kevin Menguelti

Erwine Maude Pargon

Embodiments of the invention generally relate to methods for fabricating devices on semiconductor substrates. More specifically, embodiments of the invention relate to methods of patterning magnetic materials. Certain embodiments described herein use a reducing chemistry containing a hydrogen gas or hydrogen containing gas with an optional dilution gas at temperatures ranging from 20 to 300 degrees Celsius at a substrate bias less than 1,000 DC voltage to reduce the amount of sputtering and redeposition. Exemplary hydrogen containing gases which may be used with the embodiments described herein include NH, H, CH, CH, SiH, and HS. It has been found that patterning a magnetic tunnel junction with an oxidizer-free gas mixture comprising hydrogen maintains the integrity of the magnetic tunnel junction without producing harmful conductive residue.

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Grenoble, France

Jérémy Gilbert Maurice Pereira