Antaios

Jérémy Brun-Picard

Marc Drouard

Jérémie Vigier

A memory device may comprise a substrate defining a main plane; a plurality of memory cells each comprising a SOT current layer disposed in the main plane of the substrate and a magnetic tunnel junction residing on the SOT current layer; and a bit line and a source line to flow a write current in a write path including the SOT current layer of a selected memory cell. The source line comprises a conductive magnetic material providing a magnetic bias field extending to the magnetic tunnel junction of the selected memory cell for assisting the switching of the cell state when the write current is flowing.

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Sion, Switzerland

Jérémy Brun-Picard