Toshiba Ceramics Co., Ltd.

Jyunsei Yamabe

Naoaki Sakurai

Naoya Hayamizu

Hisatsugu Kurita

Koji Izumome

Manabu Hirasawa

Hiromi Nagahama

Takao Ino

This invention provides a cleaning method of silicon wafer for obtaining a silicon wafer in which micro roughness thereof under spatial frequency of 20/&#x3bc;m is 0.3 to 1.5 nmin terms of power spectrum density, by passing a process of oxidizing the silicon wafer with ozonized water and a process of cleaning said oxidized silicon wafer with hydrofluoric acid. Consequently, it is possible to remove surface adhering pollutant such as particles and metallic foreign matter with the surface structure of silicon wafer flattened up to atomic level by annealing maintained.

Silicon wafer cleaning method

Growing community of inventors

Yokohama, Japan

Jyunsei Yamabe