Renesas Electronics Corporation

Jyun Funaki

Yasushi Shigeno

Hitoshi Akamine

Akishige Nakajima

Tsutomu Kobori

Tomoyuki Ishikawa

Izumi Arai

Kazuto Tajima

There is provided a technique for reducing the occurrence of higher harmonics which occur from a field effect transistor, particularly a field effect transistor configuring a switching element of an antenna switch. In a transistor having a meander structure, the gate width of a partial transistor closest to a gate input side is increased. More specifically, a comb-like electrode is made longer than the other comb-like electrodes. In other words, a finger length is made greater than any other finger length. In particular, the comb-like electrode has the greatest length in all the comb-like electrodes.

Semiconductor device

Growing community of inventors

Tokyo, Japan

Jyun Funaki