Playnitride Inc.

Genesis Photonics Inc.

Jyun-De Wu

Yen-Lin Lai

Yu-Chu Li

Shen-Jie Wang

Ching-Liang Lin

Chi-Feng Huang

Chun-Chieh Lee

Yu-Yun Lo

Kuan-Yung Liao

Chien-Chih Yen

A light emitting device includes an epitaxial structure. The epitaxial structure includes a first type semiconductor layer, a second type semiconductor layer and a light emitting layer. The first type semiconductor layer includes a first semiconductor sublayer. The light emitting layer is disposed between the first type semiconductor layer and the second type semiconductor layer. The first semiconductor sublayer includes a heavily doped part and a lightly doped part which are doped by a first type dopant. A doping concentration of the first type dopant in the heavily doped part is equal to 10atoms/cmor between 10atoms/cmand 10atoms/cm. A doping concentration of the first type dopant in the lightly doped part is less than or equal to 10atoms/cm.

Light emitting device

A patterned substrate includes a main base and a plurality of patterned structures. The main base has at least one device-disposed region and a cutting region surrounding the device-disposed region. The patterned structures are integratedly formed with the main base, and only distributed in the cutting region of the main base. The patterned structures are separated from each other.

Patterned substrate and light emitting diode wafer

A nitride semiconductor structure and a semiconductor light emitting device are revealed. The semiconductor light emitting device includes a substrate disposed with a first type doped semiconductor layer and a second type doped semiconductor layer. A light emitting layer is disposed between the first type doped semiconductor layer and the second type doped semiconductor layer. The second type doped semiconductor layer is doped with a second type dopant at a concentration larger than 5&#xd7;10cmwhile a thickness of the second type doped semiconductor layer is smaller than 30 nm. Thereby the semiconductor light emitting device provides a better light emitting efficiency.

Nitride semiconductor structure and semiconductor light emitting device including the same

A light-emitting diode chip including a p-type semiconductor layer, a light-emitting layer, an n-type semiconductor layer, and a first metal electrode is provided. The light-emitting layer is disposed between the p-type semiconductor layer and the n-type semiconductor layer. The n-type semiconductor layer includes a first n-type semiconductor sub-layer, a second n-type semiconductor sub-layer, and an ohmic contact layer. The ohmic contact layer is disposed between the first n-type semiconductor sub-layer and the second n-type semiconductor sub-layer. The first metal electrode is disposed on the first n-type semiconductor sub-layer. A region of the first n-type semiconductor sub-layer located between the first metal electrode and the ohmic contact layer contains metal atoms diffusing from the first metal electrode, so as to form ohmic contact between the first metal electrode and the ohmic contact layer.

Light-emitting diode chip

A semiconductor structure includes a first-type doped semiconductor layer, a light emitting layer, a second-type doped semiconductor layer comprising AlInGaN layers, at least one GaN based layer, and an ohmic contact layer. The light emitting layer is disposed on the first-type doped semiconductor layer, and the second-type doped semiconductor layer is disposed on the light emitting layer. The AlInGaN layers stacked on the light emitting layer, where 0&#x3c;x&#x3c;1, 0&#x2264;y&#x3c;1, and 0&#x3c;x+y&#x3c;1, and the GaN based layer interposed between two of the AlInGaN layers, and the ohmic contact layer is disposed on the AlInGaN layers.

Semiconductor structure

A nitride semiconductor structure and a semiconductor light emitting device including the same are revealed. The nitride semiconductor structure mainly includes a stress control layer disposed between a light emitting layer and a p-type carrier blocking layer. The p-type carrier blocking layer is made from AlGaN (0&#x3c;x&#x3c;1) while the stress control layer is made from AlInGaN (0&#x3c;x&#x3c;1, 0&#x3c;y&#x3c;1, 0&#x3c;x+y&#x3c;1). The light emitting layer has a multiple quantum well structure formed by a plurality of well layers and barrier layers stacked alternately. There is one well layer disposed between the two barrier layers. Thereby the stress control layer not only improves crystal quality degradation caused by lattice mismatch between the p-type carrier blocking layer and the light emitting layer but also reduces effects of compressive stress on the well layer caused by material differences.

A light-emitting diode chip including a p-type semiconductor layer, a light-emitting layer and an n-type semiconductor layer is provided. The light-emitting layer is disposed between the p-type semiconductor layer and the n-type semiconductor layer. A ratio of a sum of thicknesses of all semiconductor layers of the light-emitting diode chip over a maximum width of the light-emitting diode chip ranges from 0.02 to 1.5. A ratio of a sum of thicknesses of all semiconductor layers located in a side of the light-emitting layer toward the p-type semiconductor layer over the sum of thicknesses of all semiconductor layers of the light-emitting diode chip ranges from 0.05 to 0.2.

Light emitting diode chip

A semiconductor laser device includes a semiconductor epitaxial structure, an electrode pad layer, and a transparent conductive layer. The semiconductor epitaxial structure includes a first semiconductor layer, a second semiconductor layer, and a light emitting layer. The light emitting layer is disposed between the first semiconductor layer and the second semiconductor layer, and the first semiconductor layer is disposed between the electrode pad layer and the light emitting layer. The transparent conductive layer is disposed between the electrode pad layer and the first semiconductor layer. The first semiconductor layer has a ridged structure on one side away from the light emitting layer. The electrode pad layer has at least one empty area, and an orthogonal projection of the at least one empty area along a direction perpendicular to the light emitting layer is overlapped with at least a portion of an orthogonal projection of the ridged structure along the direction.

Semiconductor laser device

A semiconductor light-emitting device including a light-emitting layer, a first N-type waveguide layer and a plurality of semiconductor layers is provided. The light light-emitting layer has a first side and a second side opposite to the first side. The first N-type waveguide layer is disposed at the first side, and the semiconductor layers are disposed at the second side. The semiconductor layers include at least one P-type semiconductor layer and a plurality of N-type semiconductor layers, and a quantity of the N-type semiconductor layers is more than a quantity of the at least one P-type semiconductor layer.

Semiconductor light-emitting device

A semiconductor light-emitting device including a P-type semiconductor cladding layer, an N-type semiconductor layer, a light-emitting layer, and a hole injection layer is provided. The P-type semiconductor cladding layer is doped with magnesium. The light-emitting layer is disposed between the P-type semiconductor cladding layer and the N-type semiconductor layer. The hole injection layer is disposed between the P-type semiconductor cladding layer and the light-emitting layer. The hole injection layer includes a first super lattice structure formed by alternately stacking a plurality of magnesium nitride layers and a plurality of semiconductor material layers. The chemical formula of each of the semiconductor material layers is AlInGaN, and 0&#x2266;x&#x2266;1, 0&#x2266;y&#x2266;1, and 0&#x2266;x+y&#x2266;1.

An epitaxy base including a substrate and a nucleating layer disposed on the substrate. The nucleating layer is an AlN layer with a single crystal structure. A diffraction pattern of the nucleating layer includes a plurality of dot patterns. Each of the dot patterns is substantially circular, and a ratio between lengths of any two diameters perpendicular to each other on each of the dot patterns ranges from approximately 0.9 to approximately 1.1. A semiconductor light emitting device, a manufacturing method of the epitaxy base, and a manufacturing method of the light emitting semiconductor device are further provided.

Epitaxy base, semiconductor light emitting device and manufacturing methods thereof

A light emitting module including a driving unit and a light emitting diode is provided. The light emitting diode is electrically connected to the driving unit and the driving unit provides an operating current to make the light emitting diode emit light. The light emitting diode includes an n-type semiconductor layer, a light-emitting layer, an electron-blocking layer, and a p-type semiconductor layer. The electron-blocking layer has a thickness, and the thickness is smaller than or equal to 30 nm or is larger than or equal to 80 nm. The light-emitting layer is located between the electron-blocking layer and the n-type semiconductor layer. The electron-blocking layer is located between the p-type semiconductor layer and the light-emitting layer. A ratio of current density of the light emitting diode to the thickness is larger than 0 and is smaller than or equal to 2.

Growing community of inventors

Tainan, Taiwan

Jyun-De Wu