Centre National De La Recherche Scientifique

Commissariat &#xc0; L'&#xc9;nergie Atomique Et Aux &#xc9;nergies Alternatives

Université Grenoble Alpes

Texas Instruments Corporation

Jyotirmoy Chatterjee

Bernard Dieny

Ricardo Sousa

Hrushikesh Tukaram Garud

Lucian Prejbeanu

Ajoy Kumar Ray

Stéphane Auffret

Manjunatha Mahadevappa

Debdoot Sheet

Paulo Veloso Coelho

Stéphne Auffret

A magnetic stack includes a first element including a ferromagnetic layer; a second element including a metal layer able to confer on the assembly formed by the first and the second elements a magnetic anisotropy perpendicular to the plane of the layers. The first element further includes a refractory metal material, the second element being arranged on the first element.

Magnetic stack, multilayer, tunnel junction, memory point and sensor comprising such a stack

A synthetic antiferromagnetic layer includes a first ferromagnetic layer containing an amorphizing element, the first ferromagnetic layer having a first structural symmetry; a second ferromagnetic layer having a second structural symmetry; wherein the first and the second ferromagnetic layers are antiferromagnetically coupled by a trifunctional non-magnetic multi-layered structure, the antiferromagnetic coupling being an Ruderman-Kittel-Kasuya-Yosida (RKKY) coupling, the non-magnetic multi-layered structure including at least two non-magnetic layers, the non-magnetic multilayered structure being at least partially nano-crystalline or amorphous in order to ensure a structural transition between the first ferromagnetic layer having the first structural symmetry and the second ferromagnetic layer having the second structural symmetry, the non-magnetic multilayered structure being adapted to absorb at least part of the amorphizing element out of the first ferromagnetic layer in contact with the non-magnetic multi-layered structure.

Synthetic antiferromagnetic layer, magnetic tunnel junction and spintronic device using said synthetic antiferromagnetic layer

A novel modification to the order statistics filters called the Adaptive Weighted-Local-Difference Order Statistics is shown that will act as a generic framework for the design of adaptive filters suitable for specific signal processing applications. To demonstrate the design of filters using this framework two implementations were defined and evaluated: Edge Orientation Adaptive Weighted-Local-Difference Median Filter (EOAWLDMF) and Luminance-Similarity Adaptive Weighted-Local-Difference Median Filter (LSAWLDMF) for restoration of noisy images.

Adaptive weighted-local-difference order statistics filters

Growing community of inventors

West Bengal, India

Jyotirmoy Chatterjee