Nec Corporation

Jyonu Ri

Hisashi Takemura

Risho Koh

Yukishige Saito

A semiconductor device includes a first insulating layer, a semiconductor layer formed on the first insulating layer, a second insulating layer on a part of the semiconductor layer, and a gate electrode formed on the semiconductor layer through the second insulating layer. The semiconductor layer includes a low concentration region formed under the gate electrode through the second insulating layer, two high concentration regions which are formed in at least upper regions on outer sides of the low concentration region under the gate electrode through the second insulating layer, and have an impurity concentration higher than an impurity concentration of the low concentration region, respectively, and two source/drain regions which are formed in side portions of the high concentration regions to have low concentration region side end portions, respectively. A width of the high concentration region is equal to or less than 30 nm.

SOI semiconductor device with improved halo region and manufacturing method of the same

A method of manufacturing a semiconductor device of the present invention includes (a) sequentially forming a gate insulating film, a first conductive layerand a first insulating filmon a semiconductor layerprovided on an insulating film; (b) selectively removing the semiconductor layer, the gate insulating film, the first conductive layer and the first insulating film to form a device isolation trench; (c) forming a second insulating filmin the device isolation [element separation] trench, wherein a height of an upper surface of the second insulating film is substantially coincident with that of an upper surface of the first insulating film; (d) removing a part of the second insulating film and the first insulating film such that a height of an upper surface of the exposed first conductive layer is substantially coincident with that of the top surface of the second insulating film; and (e) patterning the first conductive layer to form a gate electrode.

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Tokyo, Japan

Jyonu Ri